Method and device for deciding semiconductor making process state and semiconductor making device

Abstract

The invention uses plasma generated in a container to etch semiconductor wafer with multiple films on its surface. In specific processing period, changes of lights with multiple wavelengths are shown on the showing section of surface of the wafer. Based on variance of multiple wavelengths displayed, the state of etching processing can be determined.

Description

technical field [0001] The invention relates to a device for etching and manufacturing semiconductor devices, and relates to a device with means for measuring etching depth. Background technique [0002] In forming semiconductor devices, dry etching is widely used to remove various material layers such as dielectric materials and insulating material layers formed on the surface of a semiconductor wafer, or to form patterns on these layers. In performing this dry etching method, it is important to adjust etching so that the etching depth or layer thickness is desired in the processing of the above-mentioned layers. Therefore, it is necessary to accurately detect the end point of etching or the film thickness. [0003] However, it is well known that when a semiconductor wafer is dry-etched by plasma, the intensity of light emitted from light of a specific wavelength included in the plasma light changes as the etching of a specific film progresses. Then, as one of the detectio...

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Problems solved by technology

[0009] (2) In addition, in the etching process of the material to be processed (for example, silicon or an insulating film and a mask material provided thereon) as a process, the mask material is also etched together with the silicon or insulating film, so not only The interference light from the material to be processed and the interference light from the mask material also fluctuate, so in order to eliminate the influence caused by mask etching, only the amount of etching (etching depth) of the material to be processed is detected, and it is necessary to consider detecting Interfering light changes from materials, but this has not been considered in the prior art

There is insufficient consideration in the prior art regarding the reduction of these effects

[0011] Based on the above reasons, it is difficult to adjust the etching state by detecting the etching depth of the processed layer or the remaining film thickness in the plasma etching process with high precision, and it is difficult to adjust the etching state. Handling semiconductors (wafers) is difficult

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