Wire bonding method and semiconductor device
A semiconductor and device technology, applied in the field of wire bonding and semiconductor devices, can solve the problems of large size of semiconductor chips and semiconductor devices
Inactive Publication Date: 2008-01-09
DENSO CORP
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
This will make semiconductor chips and semiconductor devices large in size
Method used
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Embodiment Construction
[0023] A first embodiment in which the present invention is applied to a power device will be described below with reference to FIGS. 1-8.
[0024] As shown in FIG. 1 , in this embodiment, a semiconductor device 1 generally includes an island 2 for fixing a chip thereon, a semiconductor chip 3 on the island 2 , and interconnections 4 . The semiconductor chip 3 may be an IGBT or a power MOSFET. Three Au wires 6 connect chip electrodes (pads) 5 and interconnections 4 on semiconductor chip 3 using a wire bonding method.
[0025] The process of wire-bonding the Au wire 6 between the interconnection 4 and the chip electrode 5 is described with reference to FIGS. 2 to 8 .
[0026] First, as shown in FIG. 4 , bumps 7 are formed on chip electrodes 5 by ball-bonding Au wires 6 . The ball bonding process is shown in Figures 2 and 3. As shown in FIG. 2 , capillary 9 for supplying Au wire 6 has Au ball 8 formed at its tip (end), and Au ball 8 is placed on chip electrode 5 . Then, as s...
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A wire bonding method for bonding a plurality of conducting wires to connect first conductors and second conductors has the following steps. 1) Bonding a first conducting ball on a first first conductor. 2) Bonding a first conducting wire on the first conducting ball, the first conducting wire being connected to a first second conductor. 3) Bonding a second conducting ball on a second first conductor. 4) Bonding a second conducting wire on the second conducting ball, the second conducting wire being connected to a second second conductor. Here, the second first conductor or the second second conductor is the first conducting wire bonded on the first conducting ball.
Description
technical field [0001] The invention relates to a wire bonding method of a semiconductor device and a semiconductor device manufactured by the method. Background technique [0002] Traditional semiconductor power devices, such as laterally diffused MOS (LDMOS), have multiple chip electrodes on the semiconductor chip to realize the adjustment of its internal large current. Power devices also have interconnects of a certain size for connecting multiple Au (Au) lines thereon. Au wires connect chip electrodes and interconnects by wire bonding method. In this case, using the wire bonding method of JP10-229100A, a plurality of Au wires (for example, three Au wires) are connected to the same number of chip electrodes (for example, three electrodes) and interconnections. [0003] Power devices require multiple chip electrodes on the semiconductor chip to realize the flow of large current inside it. This makes the size of the semiconductor chip and the semiconductor device large. ...
Claims
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IPC IPC(8): H01L21/60B23K31/00H01L23/48H01L31/0203H01R43/02
CPCH01L2224/49427H01L24/85H01L2224/85986H01L2224/49425H01L24/45H01L2224/85181H01L2224/48997H01L2924/01052H01L2224/48091H01L24/05B23K20/007H01L2924/01004H01L2924/01006H01L2224/85051H01L2224/48145H01L24/48H01L2224/4911H01L2924/13055H01L2924/01079H01L23/49575H01L2224/48475H01L2224/85951H01L2224/48479H01L2924/01005H01L24/78H01L2224/32145H01L2924/01082H01L2225/06562H01L2224/05599H01L2924/01013H01L2224/45144H01L2924/13091H01L2224/48992H01L2224/4941H01L2224/48095H01L2224/48471H01L24/49H01L2224/48247H01L2224/49113H01L2224/48599H01L2224/05556H01L2224/48465H01L2924/01019H01L2224/78301H01L2224/85399H01L2924/01033H01L2924/01068H01L2924/00014H01L2224/04042H01L2224/85205H01L2924/1306H01L2224/85186H01L2924/00H01L2224/48227H01L2224/48455H01L2924/00015H01L2224/4554H01L2924/00012
Inventor 石川克己牧野信也武井宏
Owner DENSO CORP