Wire bonding method and semiconductor device
A wire bonding and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of large size of semiconductor chips and semiconductor devices
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[0023] A first embodiment in which the present invention is applied to a power device will be described below with reference to FIGS. 1-8.
[0024] As shown in FIG. 1 , in this embodiment, a semiconductor device 1 generally includes an island 2 for fixing a chip thereon, a semiconductor chip 3 on the island 2 , and interconnections 4 . The semiconductor chip 3 may be an IGBT or a power MOSFET. Three Au wires 6 connect chip electrodes (pads) 5 and interconnections 4 on semiconductor chip 3 using a wire bonding method.
[0025] A description of the process of wire-bonding Au wires 6 between interconnects 4 and chip electrodes 5 can be found in Figures 2 to 8 .
[0026] First, if Figure 4 As shown, on the chip electrode 5, bumps 7 are formed by ball-bonding Au wires 6. Ball welding process such as figure 2 with 3 shown. Such as figure 2 As shown, the capillary 9 for supplying the Au wire 6 is formed with an Au ball 8 at its tip (end), and the Au ball 8 is placed on the ...
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