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Wire bonding method and semiconductor device

A wire bonding and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of large size of semiconductor chips and semiconductor devices

Inactive Publication Date: 2005-09-21
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This will make semiconductor chips and semiconductor devices large in size

Method used

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  • Wire bonding method and semiconductor device
  • Wire bonding method and semiconductor device
  • Wire bonding method and semiconductor device

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Embodiment Construction

[0023] A first embodiment in which the present invention is applied to a power device will be described below with reference to FIGS. 1-8.

[0024] As shown in FIG. 1 , in this embodiment, a semiconductor device 1 generally includes an island 2 for fixing a chip thereon, a semiconductor chip 3 on the island 2 , and interconnections 4 . The semiconductor chip 3 may be an IGBT or a power MOSFET. Three Au wires 6 connect chip electrodes (pads) 5 and interconnections 4 on semiconductor chip 3 using a wire bonding method.

[0025] A description of the process of wire-bonding Au wires 6 between interconnects 4 and chip electrodes 5 can be found in Figures 2 to 8 .

[0026] First, if Figure 4 As shown, on the chip electrode 5, bumps 7 are formed by ball-bonding Au wires 6. Ball welding process such as figure 2 with 3 shown. Such as figure 2 As shown, the capillary 9 for supplying the Au wire 6 is formed with an Au ball 8 at its tip (end), and the Au ball 8 is placed on the ...

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PUM

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Abstract

A wire bonding method for bonding a plurality of conducting wires to connect first conductors and second conductors has the following steps. 1) Bonding a first conducting ball on a first first conductor. 2) Bonding a first conducting wire on the first conducting ball, the first conducting wire being connected to a first second conductor. 3) Bonding a second conducting ball on a second first conductor. 4) Bonding a second conducting wire on the second conducting ball, the second conducting wire being connected to a second second conductor. Here, the second first conductor or the second second conductor is the first conducting wire bonded on the first conducting ball.

Description

technical field [0001] The invention relates to a wire bonding method of a semiconductor device and a semiconductor device manufactured by the method. Background technique [0002] Traditional semiconductor power devices, such as laterally diffused MOS (LDMOS), have multiple chip electrodes on the semiconductor chip to realize the adjustment of its internal large current. Power devices also have interconnects of a certain size for connecting multiple Au (Au) lines thereon. Au wires connect chip electrodes and interconnects by wire bonding method. In this case, using the wire bonding method of JP10-229100A, a plurality of Au wires (for example, three Au wires) are connected to the same number of chip electrodes (for example, three electrodes) and interconnections. [0003] Power devices require multiple chip electrodes on the semiconductor chip to realize the flow of large current inside it. This makes the size of the semiconductor chip and the semiconductor device large. ...

Claims

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Application Information

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IPC IPC(8): H01L21/60B23K31/00H01L23/48H01L31/0203H01R43/02
CPCH01L2224/49427H01L24/85H01L2224/85986H01L2224/49425H01L24/45H01L2224/85181H01L2224/48997H01L2924/01052H01L2224/48091H01L24/05B23K20/007H01L2924/01004H01L2924/01006H01L2224/85051H01L2224/48145H01L24/48H01L2224/4911H01L2924/13055H01L2924/01079H01L23/49575H01L2224/48475H01L2224/85951H01L2224/48479H01L2924/01005H01L24/78H01L2224/32145H01L2924/01082H01L2225/06562H01L2224/05599H01L2924/01013H01L2224/45144H01L2924/13091H01L2224/48992H01L2224/4941H01L2224/48095H01L2224/48471H01L24/49H01L2224/48247H01L2224/49113H01L2224/48599H01L2224/05556H01L2224/48465H01L2924/01019H01L2224/78301H01L2224/85399H01L2924/01033H01L2924/01068H01L2924/00014H01L2224/04042H01L2224/85205H01L2924/1306H01L2224/85186H01L2924/00H01L2224/48227H01L2224/48455H01L2924/00015H01L2224/4554H01L2924/00012
Inventor 石川克己牧野信也武井宏
Owner DENSO CORP