Memory element, method of repairing its defect memory unit automatically and method of its access

Abstract

The memory element capable of self-healing includes work unit array with several work memory units, redundant unit array with several redundant memory unit, control logic for controlling the data read from and write to the work unit array and the redundant unit array, and polling list for storing the addresses of the data in the redundant unit array. The automatic repair of the fault memory unit includes judging the fault work memory unit, writing the data to the redundant memory unit and updating the address of the redundant memory unit and the address of the work memory unit. The access method of the memory element is also described.

Description

technical field [0001] The present invention relates generally to digital storage systems, and more particularly to storage elements, methods of automatically repairing defective memory cells, and methods of accessing storage elements. Background technique [0002] A memory device typically includes an array of memory cells. If a memory cell fails (ie, cannot store data written to the memory cell), the entire array may have to be discarded. A storage device usually includes many sectors or arrays, and each array includes many working units and at least one redundancy unit. If a working unit is damaged, a redundant unit in the same array can replace the damaged working unit, and data can be stored in the redundant unit. [0003] A disadvantage of conventional memory devices is that if the number of damaged working cells in the first array is greater than the number of redundant cells in the same array, all damaged working cells cannot be replaced. Consequently, the entire ...

AI Technical Summary

Problems solved by technology

However, in the field, if a working unit is damaged (for example, when using a storage element), the damaged working unit cannot be replaced, but the entire storage element must be replaced

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