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Surface treatment method and instrument of air bubble utilizing backing

A substrate surface and substrate technology, applied in liquid cleaning methods, chemical instruments and methods, cleaning methods and utensils, etc., can solve the problems of microparticle pollution, restrictions on the shape and size of materials to be treated, and large electric energy. It achieves the effect of no particle pollution, high flexibility in processing size, and no need for high-speed rotating operation

Inactive Publication Date: 2008-06-25
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method consumes a large amount of electric energy, and long-term operation at high speed will cause concern about particle pollution, and there are restrictions on the shape and size of the material to be processed.

Method used

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  • Surface treatment method and instrument of air bubble utilizing backing
  • Surface treatment method and instrument of air bubble utilizing backing
  • Surface treatment method and instrument of air bubble utilizing backing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Coat the two sheets with a thickness of about 10000 A wafer of photoresist (Model FH-6400L) was placed as figure 1 The apparatus shown performs photoresist removal on the wafer. Before removing the photoresist, use OLYMPUSnanospec to measure the photoresist thickness at 54 points on the wafer, the positions of the 54 points are as follows figure 2 shown. About 1 / 3 of the wafer near the bottom (about 2.8 cm) is immersed in ultrapure water, and the ultrapure water is maintained at a temperature of 50° C. during cleaning. The air supply pipe 20 is provided with an opening with a diameter of about 0.1 mm, and the air supply pipe 20 is connected with an odor generator (Anseros, Germany). The flow rate of the ozone gas is 90 NL / hr (the ozone concentration of the ozone gas is 17% (w / w)). Activate the rotating shaft 11 to start cleaning, and rotate the support box 40 at 3-4 rpm. Cleaning time is 2 minutes. The cleaned wafer was rinsed with deionized water, and dried wit...

Embodiment 2 and 3

[0039] Except that the temperature of the ultrapure water was changed to room temperature and 80° C., the procedure in Example 1 was repeated for 2 minutes. Table 1 shows the average removal rate of Examples 1-3.

[0040]

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PUM

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Abstract

The technology of removing matter from the surface of some substrate, such as removing photoresist from the surface of chip, or forming some reaction product on the surface of some substrate is revealed. Several substrates are soaked in some liquid parallelly and vertically and some gas, such as ozone, is led into the liquid to form bubbles continuously below the substrates and the bubbles raise between each two substrates before breaking. During the raise of the bubbles, the interface between liquid and the substrate is compressed and updated and the gas-liquid-solid mass transfer efficiency in the interface is raised to complete the reaction fast and to treat the surface of the substrates effectively.

Description

technical field [0001] The present invention relates to a substrate surface treatment technique using air bubbles, and more particularly to a technique for removing photoresist from a substrate surface using air bubbles. Background technique [0002] Heterogeneous reaction systems exist in various industrial processes, such as catalyst reaction systems and long-film processes for high-end electronic components. How to improve the heterogeneous mass transfer efficiency of heterogeneous reaction systems in multiphase) is the focus of research and development of related process technologies. In a heterogeneous reaction system where gas-liquid-solid coexistence, since the reaction must go through the gas-liquid and liquid-solid boundary layer (boundary layer), the thickness of the boundary layer and the renewal frequency become the factors that affect the reaction rate. critical bottleneck. Generally, traditional technologies use operations such as mechanical stirring, high-so...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B08B3/04B08B3/00A61K9/02A61M31/00
Inventor 金光祖陈秋美罗正忠徐静怡法汉恩·夏得曼
Owner IND TECH RES INST
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