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Method for growing high-performance tube type sapphire back cover

A sapphire, high-performance technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of complicated process, difficult to realize, and high difficulty, and achieve the effect of simple process, improved product quality, and convenient processing

Inactive Publication Date: 2008-09-17
天津市硅酸盐研究所有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Adopt above-mentioned disclosed method when processing, procedure is complicated, difficulty is extremely great, is almost difficult to realize

Method used

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Embodiment Construction

[0008] The present invention will be further described in detail below in conjunction with specific implementation methods: a method for growing a high-performance tubular sapphire back cover, which uses a one-time forming wet guide method technology to directly draw the back cover of tubular sapphire of required specifications and sizes from the melt , firstly determine the specification and size of the tubular sapphire that needs to be backed, and make a matching back cover mold according to the above specification and size, and then select high-purity flame-fused sapphire scraps as raw materials, and use the wet-guided mold technology for one-time molding. The well-grown high-performance tubular sapphire is used as the seed crystal, and the bottom cover mold is used to grow the tubular sapphire back cover. The temperature field conditions for crystal growth should be reasonable, the lateral temperature field should be uniform, the lateral temperature difference should be with...

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Abstract

This invention exposed a kind of closing method of high performance cannular sapphire. First, it needs to determine the specification of closed cannular sapphire, and produce the matching die according to it. Then selecting sapphire particleboard from flame fusion method as raw material, and using high performance cannular sapphire as seeding, it can grow the close with die. The temperature field should be reasonable. The transverse temperature difference will be within 2DEG C, the lognitudinal temperature grads within 10mm of die end face will be 3-4DEG C, the growth speed is 30-40mm / h. On the bottom of cannular sapphire can grow column sapphire and close one end. The appearance of the close is uniform and smooth. The crystal is uniform and closely sealed. The crystal of sapphire is with high melting point, good rigidity, and good IR transmission capability. It can be used in semiconductor, chemistry, aviation, spaceflight, national defence and other high-tech sectors.

Description

technical field [0001] The invention relates to a gemstone growth method, in particular to a method for growing a high-performance tubular sapphire back cover. Background technique [0002] High-performance tubular sapphire with back cover has the characteristics of regular appearance, smooth surface, good transparency, good crystal integrity and tight back cover, and because of the high melting point, high hardness, corrosion resistance and good infrared radiation of sapphire crystal itself Transmittance and a series of excellent properties, such products can be used in high-tech fields such as semiconductors, chemicals, aviation, aerospace, national defense and other industries. The method of growing gemstones directly from the melt is carried out according to the method of H.E.LaBelle, Jr. in the United States, which is called the wetting-guided mode method, or EFG method. US Patent 3591348 discloses a method for growing white gemstones, Chinese Patent 85103282.6 disclos...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/34C30B29/20C30B29/66
Inventor 滑芬张莲花王晶秦承安张贵芹
Owner 天津市硅酸盐研究所有限公司