Flat capacitor structure and flat capacitor, grid and resistance forming technique method
A technology of flat plate capacitors and process methods, which is applied in the direction of circuits, electrical components, and electric solid devices, and can solve problems such as hidden dangers of interlayer dielectric thickness uniformity, production loss, and deterioration of resistivity uniformity of low-resistance layer resistance, etc., to achieve improved Film thickness uniformity, uniformity improvement, process simplification effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0010] Such as figure 2 As shown, it is a structural schematic diagram of the plate capacitor 1, the gate 2, the low-resistance layer resistor 3 and the high-resistance layer resistor 4 of the present invention. It uses the injected polysilicon as the lower pole of the capacitor 1, and the interlayer dielectric of the capacitor 1 is prepared before the metal layer PVD of the gate 2, and then PVDs the metal layer of the gate 2 and the upper pole of the capacitor 1 at the same time. When etching, the upper pole of the capacitor 1 is etched together with the metal layer of the gate 2 and the low-resistance layer resistor 3, and then the lower pole of the capacitor 1 and the gate are simultaneously etched using the interlayer dielectric and photoresist as a mask. The polysilicon of electrode 2 / low resistance layer resistance 3 can even be etched into polysilicon with high resistance, and its resistance value can be adjusted by high-energy inversion implantation through the dielec...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 