Unlock instant, AI-driven research and patent intelligence for your innovation.

Micro Nano silicon based optical amplifier, and method for preparing gain medium of the amplifier

A technology of optical amplifier and gain medium, which is applied in the fields of instruments, optics, nonlinear optics, etc., and can solve the problem that the gain coefficient cannot be significantly improved

Inactive Publication Date: 2008-12-03
HUAZHONG UNIV OF SCI & TECH
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problem that the Si(Er) / Si multilayer structure gain coefficient cannot be significantly improved in silicon-based optical amplifiers, the present invention proposes a preparation method for a micro-nano silicon-based optical amplifier and the gain medium of the amplifier, which uses an additional layer The metal grating structure is used to effectively control the gain coefficient of the Si(Er) / Si multilayer structure, thereby significantly improving the net gain of the silicon-based optical amplifier; the preparation method is simple and has excellent performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro Nano silicon based optical amplifier, and method for preparing gain medium of the amplifier
  • Micro Nano silicon based optical amplifier, and method for preparing gain medium of the amplifier
  • Micro Nano silicon based optical amplifier, and method for preparing gain medium of the amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] The micro-nano silicon-based optical amplifier of the present invention will be further described below in conjunction with the accompanying drawings.

[0015] Such as figure 1 As shown, the micro-nano silicon-based optical amplifier includes a light source part, a gain medium 2 and a detection system, and the two ends of the gain medium 2 are respectively connected to the light source part and the detection system through polarization-maintaining optical fibers.

[0016] Such as figure 2 , image 3 As shown, the gain medium 2 includes:

[0017] A multi-layer Si(Er) / Si structure layer 2-1, which is on top of the gain medium 2;

[0018] The metal grating layer 2-2, the material of the metal grating layer 2-2 is metal gold, and the thickness of the layer is T; the upper surface of the metal grating layer 2-2 is periodically provided with several grooves and protrusions sequentially, The depth of the groove is D, the width of the protrusion is W, and the period width ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
depthaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

A light amplifier of silicon base is prepared for connecting two ends of gain media separately to light source unit and detection system through polarization preserving fiber. The method for preparing said gain media includes sputtering a layer of gild foil on Si based substrate, growing a layer of photo-resist periodically in interval mode on surface of gold foil, vertically etching gold foil uncovered by photo-resist then starting up atom layer depositing unit to grow Si (Er) layer and Si layer alternatively.

Description

technical field [0001] The invention relates to a silicon-based optical amplifier, in particular to a silicon-based optical amplifier with surface plasmon enhancement effect. Background technique [0002] Materials and devices based on the surface plasmon enhancement effect have become a research hotspot in the fields of physics, chemistry, biology and material science. So far, the application of surface plasmon enhancement effect has been able to improve the luminous efficiency of micro-nano scale quantum dots (such as CdSe, Si quantum dots, InGaN), rare metals (such as erbium ions) and organic materials (such as dyes, PMMA). Among them, the most representative one is the organic light-emitting diode (OLED). Through the coupling of organic materials and surface plasmons, the luminous efficiency is doubled, and it has become the best candidate for new light-emitting and display devices. [0003] In recent years, with the continuous improvement of information transmission ra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/39C23C28/00C23C14/34C23C14/14C23C4/00C23C16/24C23C16/14C23C16/52
Inventor 周治平汪毅
Owner HUAZHONG UNIV OF SCI & TECH