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Manufacturing method for enlarging lighting area of LED

A manufacturing method and a technology of light emitting area, which are applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as glare and soft outgoing light, and achieve the effects of improving brightness, increasing heat dissipation area, and increasing light emitting area

Inactive Publication Date: 2009-02-18
GUANGDONG TONGFANG ILLUMINATIONS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Compared with the existing LED chips, the present invention increases the heat dissipation area while increasing the light emitting area, and solves the problem of directionality, that is, the glare of the existing LED emitting light to a certain extent, so that the emitting light is relatively Soft; the more important point is to reduce the total reflection of the light-emitting surface, so the final emitted light increases, which makes the LED brighter and improves the brightness of the LED bulb

Method used

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  • Manufacturing method for enlarging lighting area of LED
  • Manufacturing method for enlarging lighting area of LED
  • Manufacturing method for enlarging lighting area of LED

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Embodiment Construction

[0017] The present invention relates to a method for manufacturing and processing LED wafers. The method comprises the following steps: (1) growing an epitaxial layer on an LED substrate according to the LED wafer epitaxy production process. The epitaxial layer includes a P layer and an N layer. The junction is the PN junction light-emitting area of ​​the LED chip; (2) at the side of the epitaxial layer of the above-mentioned LED chip, one of the corners is completely cut off along the side, so that the side forms a slope; (3) ) Encapsulating the above-mentioned processed LED chip into an LED light bulb. When cutting the epitaxial layer, one of the sides can be cut, and two, three or four sides can also be cut at the same time.

[0018] FIG. 1 is a schematic diagram of a first embodiment of the present invention, a schematic diagram of a LED chip with a straight cut surface. As shown in FIG. 1(A), an epitaxial layer 1 is formed on a substrate 2 by means of epitaxy. The epitax...

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Abstract

A method for enlarging light-outgoing area of LED includes cutting one of edge corners completely off along side surface of epitaxial layer on LED chip to make said side surface be a slope surface and setting height of said slope surface be less than thickness of said epitaxial layer.

Description

technical field [0001] The invention relates to a light emitting diode, in particular to a method for manufacturing an LED. Background technique [0002] In the current lighting field, LED light-emitting diodes are widely used in various products due to their absolute advantages. The production process of the existing LED chip has become increasingly mature. Basically, the first and second material layers are epitaxially formed on the substrate to complete the production of the chip. The junction of the two layers of materials is the PN junction light-emitting area. In order to allow the working power to be smoothly loaded between the PN junctions, part of the interface between the first material layer and part of the PN junction must be removed, so that electrodes can be fixed on the second material layer, thus losing a part of the light-emitting area and lowering the Luminous efficiency. In order to solve this problem, most of the current substrates use conductive materi...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/02
Inventor 樊邦弘
Owner GUANGDONG TONGFANG ILLUMINATIONS CO LTD