Film etching method

Abstract

This invention is a thin film etching method, being applied to a semiconductor or thin film transistor array (TFT Array) film process, to improve the undercut problem of existing etching, or make the etched film's shape more perfect. The film etching method divides the existing etching process into two stages, and between the two stages, inserting into a photoresist etching process, and through appropriate photoresist etching, it increases the contact area of the film and the etching materials, so that it can eliminate the existing etching problem that the undercut or file shape is not perfect.

Description

technical field

[0001] The invention relates to a thin film etching method, in particular to a thin film etching method applied in the thin film manufacturing process of a semiconductor or thin film transistor array to eliminate chamfering after etching or improve the imperfect shape of the thin film after etching. Eclipse method. Background technique

[0002] When using thin-film technology to manufacture electronic components or wires, there are generally multiple manufacturing processes such as film formation, photoresist, and etching according to the characteristics of the manufactured components, and the etching is to use chemical reactions or physical The technology of removal by impact can achieve specific functions by forming the film into a specific structural shape by etching. Etching techniques can be divided into two types: "Wet Etching" and "Dry Etching". In wet etching, chemical solution is used to achieve the purpose of etching through chemical reaction, whi...

Examples

Embodiment Construction

[0054] Such as Figure 4 Shown is a flowchart of an embodiment of a thin film etching method of the present invention. The thin film etching method is applied in the thin film manufacturing process of a semiconductor or a thin film transistor array, which includes the following steps: providing a substrate, on which at least one thin film is formed, and on the uppermost layer of the thin film A photoresist is formed on the top (step S1); the first stage of etching is to use the first etchant to etch the film (step S2); the second stage of etching is after the first stage of etching, Use the second etchant to etch the photoresist (step S3); and the third stage etching, after the second stage etching, use the first etchant to etch the film again (step S4).

[0055] Such as Figure 5A Shown is a schematic diagram of a double-layer film structure after photolithography. Such as Figure 5B shown, is for Figure 5A A schematic diagram of the first-stage etching of the double-l...

technical field

[0001] The invention relates to a thin film etching method, in particular to a thin film etching method applied in the thin film manufacturing process of a semiconductor or thin film transistor array to eliminate chamfering after etching or improve the imperfect shape of the thin film after etching. Eclipse method. Background technique

[0002] When using thin-film technology to manufacture electronic components or wires, there are generally multiple manufacturing processes such as film formation, photoresist, and etching according to the characteristics of the manufactured components, and the etching is to use chemical reactions or physical The technology of removal by impact can achieve specific functions by forming the film into a specific structural shape by etching. Etching techniques can be divided into two types: "Wet Etching" and "Dry Etching". In wet etching, chemical solution is used to achieve the purpose of etching through chemical reaction, whi...

Examples

Embodiment Construction

[0054] Such as Figure 4 Shown is a flowchart of an embodiment of a thin film etching method of the present invention. The thin film etching method is applied in the thin film manufacturing process of a semiconductor or a thin film transistor array, which includes the following steps: providing a substrate, on which at least one thin film is formed, and on the uppermost layer of the thin film A photoresist is formed on the top (step S1); the first stage of etching is to use the first etchant to etch the film (step S2); the second stage of etching is after the first stage of etching, Use the second etchant to etch the photoresist (step S3); and the third stage etching, after the second stage etching, use the first etchant to etch the film again (step S4).

[0055] Such as Figure 5A Shown is a schematic diagram of a double-layer film structure after photolithography. Such as Figure 5B shown, is for Figure 5A A schematic diagram of the first-stage etching of the double-l...

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