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Micro-electromechanical varactor with enhanced tuning range

A reactor, micro-electromechanical technology, used in variable capacitors, capacitors that change the capacitance mechanically, capacitors that change the distance between electrodes, etc.

Inactive Publication Date: 2009-05-13
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Also, most prior art MEMS devices need to be packaged separately, creating some process issues that need to be addressed, at least for MEMS devices with moving parts

Method used

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  • Micro-electromechanical varactor with enhanced tuning range
  • Micro-electromechanical varactor with enhanced tuning range
  • Micro-electromechanical varactor with enhanced tuning range

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0029] The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments are shown.

[0030] FIG. 1 shows a cross section of a three-dimensional MEM varactor device viewed from a section defined by line A-A (see FIG. 2 ). The device is constructed on two separate substrates 10 and 11 on which the movable beam 50 and the fixed electrode 51 are fabricated respectively. In addition to these fixed electrodes 51 , there is a series of comb-shaped drive electrodes (drive fins) 50A suspended above the fixed electrodes 51 in a direction perpendicular to the movable beam. (The comb drive structure consists of a combination of movable beams 50 and drive fins 50A). Hereinafter, the movable electrode substrate 10 will be referred to as "chip side" and the fixed electrode substrate 11 will be referred to as "carrier side". Metal connections (not shown) to the electrodes are inserted into dielectric 20A, as is co...

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PUM

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Abstract

A three-dimensional microelectromechanical (MEM) varactor is described in which a movable beam (50) and a fixed electrode (51) are respectively fabricated on separate substrates coupled to each other. The movable beam with comb drive electrodes is fabricated on the "chip side" and the fixed bottom electrode is fabricated on the "carrier side" of a separate substrate. When the device is fabricated on both surfaces of the substrate, the chip side device is diced and "flipped", aligned and attached to a "carrier" substrate to form the final device. Comb drive (fin) electrodes are used for excitation and movement of the electrodes provides a change in capacitance. Due to the introduction of constant driving force, a large capacitance tuning range can be obtained. The three-dimensional aspect of the device facilitates a large surface area. Low drive voltages may be used when providing high aspect ratio features. During manufacture, the MEM device is fully encapsulated without additional device packaging. In addition, since alignment and bonding are done at the wafer level (wafer-level MEMS packaging), improved device yields can be obtained at low cost.

Description

technical field [0001] The present invention relates generally to microelectromechanical (MEM) switches and methods of fabricating such structures, and more particularly to the use of three-dimensional comb-like drive electrodes (fins) by chip bonding to a carrier substrate. )) of the MEM variable capacitor. Background technique [0002] Variable capacitors or varactors are an essential part of high frequency and radio frequency (RF) circuits. MEM variable capacitors have attracted considerable attention over the past few years due to their excellent electrical characteristics. For applications in aerospace, consumer electronics, and communication systems, variable capacitors using MEM technology can be easily implemented with standard semiconductor devices. [0003] Many researchers have attempted to improve the tuning range of MEMS variable capacitors because the maximum capacitive tuning range obtained by using the parallel-plate electrode method is limited. This is ca...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G5/16H03J3/18B81B3/00B81B7/00B81C1/00H01G5/011H01G5/18
CPCH01G5/18B81B2201/01Y10S257/924H01G5/011B81B7/02H01G5/16
Inventor 阿尼尔·K·钦萨金迪罗伯特·A·格罗夫斯肯尼思·J·斯坦塞沙德里·萨班纳理查德·P·沃兰特
Owner GLOBALFOUNDRIES INC