Transistor structure with breakdown protection

Abstract

The invention relates to a transistor structure with breakdown protection, which can improve the withstand breakdown energy of the transistor and expand the redundancy of ion doping concentration required by the predetermined avalanche breakdown voltage. The transistor structure prevents the parasitic bipolar transistor from being turned on, and can improve the avalanche breakdown resistance current of the transistor. At the same time, the transistor structure has a metal field effect block, which is used to expand the redundancy of the ion doping concentration required for the predetermined avalanche breakdown voltage.

Description

Technical field [0001] The invention relates to a transistor structure with breakdown protection. Background technique [0002] Single-Shot Avalanche Breakdown Energy (Single-Shot Avalanche Breakdown Energy, E AS ) Is one of the factors to evaluate the characteristics of a transistor. It represents the energy that the transistor can withstand when a single avalanche breakdown (Avalanche Breakdown) occurs. When this energy is exceeded, the junction temperature of the transistor will be too high. Cause internal damage to the component. General estimate E AS The formula is: [0003] E AS =V BR *I AS *T AS [0004] Where V BR Is the transistor breakdown voltage, I AS Is the avalanche breakdown current, and T AS Is the avalanche breakdown time. [0005] Such as Figure 1A Shown is a partial cross-sectional view of a known transistor 100 having a P-field plate 118, in which an N-type layer 104 (N-epi), a P-type well region 106, and a The N-type heavily doped region 108 and a P-type he...

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Problems solved by technology

However, due to the deviation of the process itself, generally speaking, the range of ion doping concentrations that can achieve a higher avalanche breakdown voltage is not large, resulting in different breakdown voltages for components produced by the same process

[0008] Therefore, it can be seen from the above that the above-mentioned known transistor structure with breakdown protection obviously has inconvenience and shortcomings in actual use.

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