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Transistor structure with breakdown protection

A technology of breakdown protection and transistors, applied in the direction of transistors, semiconductor devices, electrical components, etc., can solve problems such as inconvenience

Inactive Publication Date: 2006-11-15
SYST GEN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the deviation of the process itself, generally speaking, the range of ion doping concentrations that can achieve a higher avalanche breakdown voltage is not large, resulting in different breakdown voltages for components produced by the same process
[0008] Therefore, it can be seen from the above that the above-mentioned known transistor structure with breakdown protection obviously has inconvenience and shortcomings in actual use.

Method used

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  • Transistor structure with breakdown protection
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  • Transistor structure with breakdown protection

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Embodiment Construction

[0052] like figure 2 Shown is a partial cross-sectional view of an embodiment of the transistor structure with breakdown protection of the present invention. In this vertical Depletion MOS (depletion-type metal oxide semiconductor transistor, DMOS) 200, including at least one transistor module (module) 206a, a transistor module 206b located around, a P-type field effect block (P-field block) 218, and a metal field effect block 216 extending above the P-type field effect block 218.

[0053] The transistor module 206b mainly includes an N-type heavily doped region (first type ion heavily doped region) 108, a P type heavily doped region (second type ion heavily doped region) 110, a P type well Region (second-type ion-doped region) 106, part of N-type layer 104, and part of P-type field effect block (second-type ion-doped field effect block) 218, and also includes an N+ substrate 102, a gate electrode 112, and a gate oxide layer 114. At the same time, because the transistor mo...

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Abstract

This invention relates to transistor structure with breakdown protection. It can improve transistor anti breakdown energy, and it can enlarge the ion doping concentration redundancy degree of the prearranged avalanche breakdown voltage. The parasitic bipolar type transistor is avoided be ducting by this transistor structure, and the anti breakdown current can be improved. The structure has one metal field effect area block at the same time to enlarge the ion doping concentration redundancy degree needed of the prearranged avalanche breakdown voltage.

Description

technical field [0001] The invention relates to a transistor structure with breakdown protection. Background technique [0002] Single-shot transistor avalanche breakdown energy (Single-Shot Avalanche Breakdown Energy, E AS ) is one of the factors to evaluate the characteristics of the transistor, which represents the energy that the transistor can withstand when a single avalanche breakdown (Avalanche Breakdown) occurs. When this energy is exceeded, the junction temperature of the transistor will be too high. result in internal damage to the component. General Estimate E AS The formula is: [0003] E. AS =V BR *I AS *T AS [0004] where V BR is the transistor breakdown voltage, I AS is the avalanche breakdown current, and T AS is the avalanche breakdown time. [0005] like Figure 1A Shown is a partial cross-sectional view of a known transistor 100 with a P-type field plate (P-field plate) 118, wherein an N-type layer 104 (N-epi), a P-type well region 106, and a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/72H01L29/772
Inventor 黄志丰简铎欣蒋秋志
Owner SYST GEN
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