DTSCR-based transient voltage suppressor

Abstract

The invention discloses a DTSCR-based transient voltage suppressor. The DTSCR-based transient voltage suppressor comprises a P substrate; a P well, a first N well, a second N well and a third N well are sequentially arranged on the P substrate; the P well is connected with the first N well; the P well, the first N well, the second N well and the third N well each are provided with a P+ active injection region and an N+ active injection region; and a first active injection region is additionally arranged between the P well and the first N well. According to the DTSCR-based transient voltage suppressor of the invention, the first active injection region is additionally arranged between the P well and the first N well, so that the avalanche breakdown voltage of an SCR part is reduced, the SCRpart is rapidly started when an overshoot voltage in a CDM event arrives, and therefore, a transient voltage overshoot phenomenon is suppressed.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a DTSCR-based transient voltage suppressor. Background technique [0002] As semiconductor devices become increasingly miniaturized, high-density, and multi-functional, and portable products (such as mobile phones, tablets and other mobile terminals) have strict requirements on the size of the main board, it is often necessary to control the area of ​​the main board to a small degree, so it is easy to be affected by static electricity. The impact of discharge (Electro-Static discharge, ESD), which leads to the paralysis of the core circuit. [0003] The diode-triggered silicon controlled rectifier (diode-triggered-Silicon controlled rectifier, DTSCR) under the CMOS process is widely used in the ESD protection of the MOS process, and it can play an effective role in the Human-Body Model (HBM) event. ESD protection. [0004] However, DTSCR cannot play an effective role in electrosta...

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Problems solved by technology

[0004] However, DTSCR cannot play an effective role in electrostatic protection under Charged-Device Model (CDM) events. This is mainly because CDM events are characterized by fast speed and large overcharge, which will cause high transient overcharge. The traditional DTSCR has a long turn-on time and cannot effectively suppress the transient overshoot voltage when the CDM event arrives, resulting in breakdown of the gate oxide layer and paralysis of the internal core circuit

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