DTSCR-based transient voltage suppressor

A transient voltage suppression and static electricity technology, applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve problems such as long turn-on time, breakdown of gate oxide layer, paralysis of internal core circuits, etc., and achieve suppression of transient voltage overshoot The effect of the phenomenon

Active Publication Date: 2019-12-13
GENEW TECH
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Problems solved by technology

[0004] However, DTSCR cannot play an effective role in electrostatic protection under Charged-Device Model (CDM) events. This is mainly because CDM events are characterized by fast speed and large overcharge, which will cause high transient overcharge. The traditional DTSCR has a long turn-on time and cannot effectively suppress the transient overshoot voltage when the CDM event arrives, resulting in breakdown of the gate oxide layer and paralysis of the internal core circuit

Method used

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  • DTSCR-based transient voltage suppressor

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Embodiment Construction

[0023] The present invention provides a transient voltage suppressor based on DTSCR. By adding a first active injection region between the P well and the first N well, the avalanche breakdown voltage of the SCR part is reduced, so that the overshoot in the CDM event When the surge voltage arrives, it will be turned on quickly, thereby suppressing the phenomenon of transient voltage overshoot.

[0024] In order to make the object, technical solution and effect of the present invention more clear and definite, the present invention will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0025] Please refer to figure 1 , figure 1 The structural diagram of the traditional DTSCR provided for the present invention, due to the high avalanche breakdown voltage of the traditional DTSCR, w...

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Abstract

The invention discloses a DTSCR-based transient voltage suppressor. The DTSCR-based transient voltage suppressor comprises a P substrate; a P well, a first N well, a second N well and a third N well are sequentially arranged on the P substrate; the P well is connected with the first N well; the P well, the first N well, the second N well and the third N well each are provided with a P+ active injection region and an N+ active injection region; and a first active injection region is additionally arranged between the P well and the first N well. According to the DTSCR-based transient voltage suppressor of the invention, the first active injection region is additionally arranged between the P well and the first N well, so that the avalanche breakdown voltage of an SCR part is reduced, the SCRpart is rapidly started when an overshoot voltage in a CDM event arrives, and therefore, a transient voltage overshoot phenomenon is suppressed.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a DTSCR-based transient voltage suppressor. Background technique [0002] As semiconductor devices become increasingly miniaturized, high-density, and multi-functional, and portable products (such as mobile phones, tablets and other mobile terminals) have strict requirements on the size of the main board, it is often necessary to control the area of ​​the main board to a small degree, so it is easy to be affected by static electricity. The impact of discharge (Electro-Static discharge, ESD), which leads to the paralysis of the core circuit. [0003] The diode-triggered silicon controlled rectifier (diode-triggered-Silicon controlled rectifier, DTSCR) under the CMOS process is widely used in the ESD protection of the MOS process, and it can play an effective role in the Human-Body Model (HBM) event. ESD protection. [0004] However, DTSCR cannot play an effective role in electrosta...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
CPCH01L27/0262
Inventor 张立国孟庆晓付博
Owner GENEW TECH
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