A Transient Voltage Suppressor Based on dtscr

Abstract

The invention discloses a transient voltage suppressor based on DTSCR, which includes a P substrate, on which a P well, a first N well, a second N well and a third N well are sequentially arranged, and the The P well is connected to the first N well, and the P well, the first N well, the second N well and the third N well are all provided with a P+ active injection region and an N+ active injection region, and the P well is connected to the first N well. A first active injection region is also added between the N wells. The present invention reduces the avalanche breakdown voltage of the SCR part by adding the first active injection region between the P well and the first N well, so that it can be quickly turned on when the overshoot voltage in the CDM event arrives, thereby suppressing the transient voltage Overshoot phenomenon.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a DTSCR-based transient voltage suppressor. Background technique [0002] As semiconductor devices become increasingly miniaturized, high-density, and multi-functional, and portable products (such as mobile phones, tablets and other mobile terminals) have strict requirements on the size of the main board, it is often necessary to control the area of ​​the main board to a small degree, so it is easy to be affected by static electricity. The impact of discharge (Electro-Static discharge, ESD), which leads to the paralysis of the core circuit. [0003] The diode-triggered silicon controlled rectifier (diode-triggered-Silicon controlled rectifier, DTSCR) under the CMOS process is widely used in the ESD protection of the MOS process, and it can play an effective role in the Human-Body Model (HBM) event. ESD protection. [0004] However, DTSCR cannot play an effective role in electrosta...

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Problems solved by technology

[0004] However, DTSCR cannot play an effective role in electrostatic protection under Charged-Device Model (CDM) events. This is mainly because CDM events are characterized by fast speed and large overcharge, which will cause high transient overcharge. The traditional DTSCR has a long turn-on time and cannot effectively suppress the transient overshoot voltage when the CDM event arrives, resulting in breakdown of the gate oxide layer and paralysis of the internal core circuit

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