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Stress reduction of SIOC low K films

A low dielectric constant film and pressure technology, applied in coating, gaseous chemical plating, metal material coating process, etc., can solve problems such as film bending, unsatisfactory physical or mechanical properties, film rupture, etc.

Inactive Publication Date: 2009-09-16
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method of partially splitting the cyclic precursor is difficult to control, and thus, it is difficult to achieve product consistency
[0005] Furthermore, although silicone films with desirable dielectric constants have been developed, many known low-k dielectric silicone films have undesired physical or mechanical properties, such as high tensile stress
High tensile stress in the film may lead to bending or deformation of the film, film rupture, peeling of the film, or formation of voids in the film, which may damage or destroy the device comprising the film

Method used

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  • Stress reduction of SIOC low K films
  • Stress reduction of SIOC low K films
  • Stress reduction of SIOC low K films

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0047] A low dielectric constant film was deposited on a 300mm substrate at a chamber pressure of about 5 Torr and a substrate temperature of about 350°C from the following reactive gases.

[0048] Octamethylcyclotetrasiloxane (OMCTS) at about 100 sccm;

[0049] Oxygen, at about 50 sccm; and

[0050] Helium, at about 1000sccm

[0051] The substrate was positioned 450 mils from the gas distribution showerhead. A power level of about 500 W at a frequency of 13.56 MHz and a power level of about 150 W at a frequency of 350 kHz was applied to the showerhead for plasma enhanced deposition of the film. The film was deposited at a rate of about 3510 Angstroms / minute and had a dielectric constant (k) of about 3.35 measured at 0.1 MHz. The membrane has a compressive stress of -67.21 MPa.

example 2

[0053] A low dielectric constant film was deposited on a 300mm substrate at a chamber pressure of about 5 Torr and a substrate temperature of about 350°C from the following reactive gases.

[0054] Octamethylcyclotetrasiloxane (OMCTS) at about 150 sccm;

[0055] Oxygen, at about 75 sccm; and

[0056] Helium, at about 1000sccm

[0057] The substrate was positioned 450 mils from the gas distribution showerhead. A power level of about 500 W at a frequency of 13.56 MHz and a power level of about 150 W at a frequency of 350 kHz was applied to the showerhead for plasma enhanced deposition of the film. The film was deposited at a rate of about 5754 Angstroms / minute and had a dielectric constant (k) of about 3.15 measured at 0.1 MHz. The membrane has a compressive stress of -13.34 MPa.

example 3

[0059] A low dielectric constant film was deposited on a 300mm substrate at a chamber pressure of about 5 Torr and a substrate temperature of about 350°C from the following reactive gases.

[0060] Octamethylcyclotetrasiloxane (OMCTS) at about 200 sccm;

[0061] Oxygen, at about 100 sccm; and

[0062] Helium, at about 1000sccm

[0063] The substrate was positioned 450 mils from the gas distribution showerhead. A power level of about 500 W at a frequency of 13.56 MHz and a power level of about 150 W at a frequency of 350 kHz was applied to the showerhead for plasma enhanced deposition of the film. The film was deposited at a rate of about 6899 Angstroms / minute and had a dielectric constant (k) of about 2.98 measured at 0.1 MHz. The film has a tensile stress of 7.29 MPa.

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Abstract

A method for depositing a low dielectric constant film comprising introducing a gas mixture comprising one or more cyclic organosiloxanes and one or more inert gases to a substrate in a chamber. In one aspect, the gas mixture also includes one or more oxidizing gases. The ratio of the total flow rate of the one or more cyclic organosiloxanes into the chamber to the total flow rate of the one or more inert gases into the chamber is from about 0.10 to about 0.20 . Preferably, the low dielectric constant film has compressive stress.

Description

technical field [0001] Embodiments of the invention relate to the fabrication of integrated circuits. More specifically, embodiments of the invention relate to methods for depositing dielectric layers on substrates. Background technique [0002] Since integrated circuits were first introduced decades ago, the geometries of such devices have been reduced dramatically. Since then, integrated circuits have generally followed the two-year / half-size rule (often referred to as Moore's Law), which means that the number of devices on a chip doubles every two years. Today's manufacturing companies are routinely producing devices with 0.13 [mu]m and even 0.1 [mu]m line sizes, and future companies will soon be producing devices with even smaller line sizes. [0003] Continuing reductions in device geometries have created a need for films with lower dielectric constant (k) values ​​because the capacitance coupled between adjacent metal lines must be reduced to further reduce the size...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/312C23C16/40C23C16/509H01L21/316
CPCH01L21/31633H01L21/02274H01L21/3122H01L21/02216C23C16/5096H01L21/02351H01L21/02126C23C16/401
Inventor 福兰斯马尔·C·斯楚弥特海澈姆·穆萨德
Owner APPLIED MATERIALS INC