Green light diode with interspersing interaction structure
A diode and green light technology, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as increasing device manufacturing costs, changes in luminous intensity and luminous color, and fluorescence quenching
Inactive Publication Date: 2009-10-14
TAIYUAN UNIV OF TECH
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Problems solved by technology
[0002] Organic light-emitting diode OLED, because of its high luminous brightness, easy realization of large-area color flat-panel display, low-voltage DC drive, easy to match with integrated circuits, and has the advantages of full curing, wide viewing angle, rich colors, and self-illumination, is widely used in flat-panel displays and The field of lighting has a very wide application prospect. At present, red, green and blue organic electroluminescent diodes with three primary colors have been produced, but the device has a short life and low efficiency, which limits the promotion and application. To solve this problem, a On the one hand, develop luminescent materials with excellent performance, on the other hand, improve the device structure
[0003] At present, the structure of organic light-emitting diodes has many forms. In the early single-layer OLED devices, the transport capacity of the injected electrons or holes in this layer is very different, resulting in poor luminous efficiency of the device. Due to the improved carrier injection, transport and recombination, the device efficiency is effectively improved, but the device efficiency is still low. Later, a buffer layer was added to the device to reduce hole injection. Or add a hole blocking layer to limit the excess holes in the light-emitting area, but this technology requires the support of a buffer layer or barrier layer material with excellent performance, which will increase the manufacturing cost of the device and increase the turn-on voltage; Some adopt optical microcavity structure, and use the microcavity resonance effect to improve the device efficiency, but the preparation process of this structure is complicated, and the luminous intensity and luminous color change with the viewing angle
[0004] At present, the interfaces of stacked structures of organic light-emitting diodes are all flat interfaces. Generally, the transport materials used in OLEDs have better transport capabilities for holes than electrons. Therefore, in double-layer or triple-layer OLEDs, it is necessary The energy level structure is used to confine holes and electrons near the interface between the hole transport layer and the light-emitting layer, and recombine to emit light. Due to the excess holes at the interface, cationic radicals are generated in the light-emitting region, resulting in fluorescence quenching, which shortens the life of the device. short
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[0124] The present invention will be further described below in conjunction with accompanying drawing:
[0125] figure 1 Shown is the flow chart of the preparation process, which must be strictly carried out according to the preparation process parameters and operated step by step.
[0126] The amount of chemical substances required for preparation is determined within a preset range, with grams, milliliters, millimeters, micrometers, and nanometers as measurement units, and for industrial production, kilograms, liters, millimeters, micrometers, and nanometers The unit of measurement, the thickness of the flat layer and convex-concave layer of the green light diode is measured in nanometers.
[0127] Preparation of the desired N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine, 8-hydroxyquinoline aluminum, aluminum Strict weighing is required, and the fineness and purity are controlled, and no impurities are allowed to intervene to prevent the formation of by-pro...
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The invention relates to a green light diode with an interspersed interactive structure and a preparation method thereof. The diode adopts an interspersed interactive structure design, the conductive glass anode layer is a double plane layer, the hole transport layer is a single plane + convex groove layer, and the light emitting layer is a groove +Convex groove layer, the cathode layer is a single plane+convex groove layer, each part of the convex groove and the groove correspond to each other, interspersed and interacted to form a plane+convex layer+concave layer+planar layer structure, the interspersed interactive structure can expand the carrier recombination interface And the contact interface of the metal cathode layer, improve electron injection, reduce the generation of cations, and increase the probability of carrier recombination. The convex-concave film layer is formed by the alternating displacement of the main and secondary mask plates. The temperature is 50°C, and the evaporation material is converted from solid-gas-solid to form a film layer. This method has a short process flow, and the luminous efficiency of the device can be increased by 70%. The color coordinates are X=0.2707, Y=0.5267, which fills in the scientific research blank of such structure of light-emitting diode.
Description
technical field [0001] The invention relates to a green light diode with an interspersed alternating structure and a preparation method, belonging to the technical field of design and preparation of organic electroluminescent materials and light emitting devices. Background technique [0002] Organic light-emitting diode OLED, because of its high luminous brightness, easy realization of large-area color flat-panel display, low-voltage DC drive, easy to match with integrated circuits, and has the advantages of full curing, wide viewing angle, rich colors, and self-illumination, is widely used in flat-panel displays and The field of lighting has a very wide application prospect. At present, red, green and blue organic electroluminescent diodes with three primary colors have been produced, but the device has a short life and low efficiency, which limits the promotion and application. To solve this problem, a On the one hand, it develops luminescent materials with excellent perf...
Claims
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IPC IPC(8): H01L51/56H01L51/50
Inventor房晓红张志强樊文浩郝玉英王华许并社
OwnerTAIYUAN UNIV OF TECH