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Chemical vapor deposition apparatus for high purity zinc oxide and preparation method thereof

A technology of chemical vapor deposition and vapor deposition, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of raw material cost increase, and achieve high raw material utilization rate, simple process and low raw material cost Effect

Inactive Publication Date: 2009-10-28
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the purity of zinc oxide increases, the cost of raw materials will inevitably increase

Method used

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  • Chemical vapor deposition apparatus for high purity zinc oxide and preparation method thereof
  • Chemical vapor deposition apparatus for high purity zinc oxide and preparation method thereof

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preparation example Construction

[0043] see in conjunction with figure 1 and figure 2 Shown, the chemical vapor deposition preparation method of a kind of high-purity zinc oxide of the present invention, it is to adopt the chemical vapor deposition device of aforementioned high-purity zinc oxide, comprises the steps:

[0044] Step 1: Put the zinc source in the zinc boat 3, put it into the vapor deposition reaction chamber 1, and heat it to generate zinc vapor; the heating temperature range of the zinc boat 3 is: 500-850°C;

[0045] Step 2: Put the deionized water 8 into the constant temperature tank 7 and heat it to generate water vapor; the heating temperature range of the constant temperature tank 7 is: 40-100°C;

[0046] Step 3: Water vapor is introduced into the vapor deposition reaction chamber 1, and a chemical vapor deposition reaction occurs between the zinc vapor and the water vapor on the upper part of the zinc boat 3 to generate high-purity zinc oxide.

[0047] In the present invention, high-pur...

Embodiment 1

[0051]1) The raw material is 5N high-purity zinc particles (impurity Pb, Ni, Cu, Fe, Cd, Sn, Bi, Mg, Al, As, Cr, Sb<10ppm), deionized water (resistivity 10-18MΩ· cm (25°C)).

[0052] 2) The vapor deposition reaction chamber and the zinc boat are made of quartz with a purity of 4N.

[0053] 3) Put the above-mentioned high-purity zinc particles into a zinc boat, put it into a vapor deposition reaction chamber, and heat it to 720°C; put deionized water into a constant temperature bath, and heat it to 60°C; wait for the temperature of the zinc boat and constant temperature bath to stabilize Finally, the three-way valve is opened to allow water vapor to enter the vapor deposition reaction chamber, and a chemical vapor deposition reaction occurs between the zinc vapor and the water vapor on the upper part of the zinc boat to form zinc oxide.

[0054] The results of trace impurities measured by inductively coupled plasma optical emission spectrometer are as follows:

[0055] (Note ...

Embodiment 2

[0059] 1) The raw material is 5N high-purity zinc particles (impurity Pb, Ni, Cu, Fe, Cd, Sn, Bi, Mg, Al, As, Cr, Sb<10ppm), deionized water (resistivity 10-18MΩ· cm (25°C)).

[0060] 2) The vapor deposition reaction chamber and the zinc boat are made of quartz with a purity of 5N.

[0061] 3) Put the above-mentioned high-purity zinc particles into a zinc boat, put it into a vapor deposition reaction chamber, and heat it to 720°C; put deionized water into a constant temperature bath, and heat it to 60°C; wait for the temperature of the zinc boat and constant temperature bath to stabilize Finally, open the three-way valve to allow water vapor to enter the vapor deposition reaction chamber; the water vapor is carried to the vapor deposition reaction chamber by nitrogen with a purity of 5N, and the flow rate of nitrogen is 4L / min; zinc vapor and water vapor are generated on the upper part of the zinc boat The chemical vapor deposition reaction produces zinc oxide.

[0062] The ...

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Abstract

A chemical vapor deposition device of high-purity zinc oxide according to the present invention is characterized in that it comprises: a vapor deposition reaction chamber, the upper part of the vapor deposition reaction chamber has an exhaust gas outlet; a zinc boat, which is fixed on the vapor deposition chamber by a support In the reaction chamber, the upper part of the zinc boat is the deposition area of ​​zinc oxide; a constant temperature tank is equipped with deionized water; a valve is connected with the lower part of the vapor deposition reaction chamber and the upper part of the constant temperature tank respectively.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a high-purity zinc oxide chemical vapor deposition device and a preparation method thereof. Background technique [0002] Zinc oxide has excellent optical and electrical properties, and also has excellent piezoelectricity, gas sensitivity, pressure sensitivity and moisture sensitivity, and is environmentally friendly and non-toxic. It can be widely used in catalysts, pigments, cosmetics, medicine and electronic devices . [0003] In the fields of medicine, cosmetics, food, etc., zinc oxide is required to have high purity (above 4N) and low content of harmful impurities. In the field of semiconductors, zinc oxide is known as the third-generation optoelectronic semiconductor material because it has a wide band gap (3.37eV) and a large exciton binding energy (60meV), and has the ability to emit blue light or near-ultraviolet light. It is an excellent room temperature ultrav...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/40C23C16/448C23C16/52
Inventor 王晓峰段垚崔军朋曾一平
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI