Organic field-effect transistors having high mobility and preparation thereof

Abstract

The invention discloses an organic field effect transistor and a preparation method thereof. The organic field effect transistor comprises a substrate, a gate electrode positioned on the substrate, aninsulating layer positioned on the gate electrode, a blending layer which is made from a polymer and dipole molecules and is positioned on the insulating layer, an organic semiconductor layer which is positioned on the blending layer of the polymer and the dipole molecules, and a source electrode and a drain electrode which are positioned on the organic semiconductor layer. The organic field effect transistor of the invention controls the property of a conducting channel by controlling the dipole moment of the dipole molecules in a polymer-dipole molecule decorated layer, and can adjust and control the mobility of the organic field effect transistor, and can randomly change the composition of the polymer-dipole molecule decorated layer and the organic semiconductor layer, which is suitable for constructing a high-mobility field effect transistor and has application value when preparing high-mobility organic field effect transistors and high-performance organic semiconductor logic gates and integrated circuits.

Description

technical field [0001] The invention relates to an organic field effect transistor with high mobility and a preparation method thereof. Background technique [0002] Since the first organic field effect transistor was reported (Tsumura, A., Koezuka, H., Ando, ​​T.Appl.Phys.Lett.49, 1210, 1986), the organic field effect transistor has been shown in the active matrix due to its The potential application value of organic integrated circuits, electronic trademarks, etc. has received widespread attention. Compared with inorganic transistors, organic field effect transistors have the characteristics of low cost, light weight, good flexibility, and easy large-scale preparation. In recent years, organic field effect transistors have made great progress, and there have been attempts to apply them to integrated circuits (Nature, 403, 521-523, 2000). But generally speaking, the mobility of organic field effect transistors is low (generally in the range of 0.1 to 1cm 2 V -1 the s -...

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Problems solved by technology

Although these research works all make the interface carrier concentration increase substantially, the threshold voltage of the device drifts in a large range, and the switching ratio drops sharply (K.P.Pernstich, S.Haas, D.Oberhoff, C.Goldmann, D.J.Gundlach, B.Batlogg , A.N.Rashid, G.Schitter, J.Appl.Phys.2004, 96, 6431)

Most of these devices change from enhancement mode to depletion mode, which is extremely unfavorable for applications such as driving organic light-emitting diodes that require high switching ratios.

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