Method for manufacturing transparent conductive film cling matrix
A technology of transparent conductive film and manufacturing method, which is applied in the direction of cable/conductor manufacturing, semiconductor/solid-state device manufacturing, semiconductor device, etc., and can solve the problems of difficulty in controlling the rotation speed, difficulty in forming a transparent conductive film, difficulty in transparent conductive film, etc.
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Embodiment 1
[0094] Indium triacetylacetonate (In(AcAc) 3 ) was dissolved in acetylacetone so that the molar concentration was 0.2mol / L to obtain a yellow transparent solution. Di-n-butyltin diacetate was added as a tin compound to this solution so that Sn / In=5% by mass, thereby preparing an ITO film-forming liquid (transparent conductive film-forming liquid). At this time, the content of the alkali metal was as follows: indium triacetylacetonate was 0.03 mass ppm, acetylacetone was 0.05 mass ppm, and di-n-butyltin diacetate was 0.03 mass ppm.
[0095] Use the ITO film-forming solution to adjust the amount of chemical thermal decomposition generated by the atomization of the ITO film-forming solution through the high-temperature sol treatment method. At the same time, use the SiO 2 An ITO film with a film thickness of 20 nm was formed on the film-coated glass substrate (SLG substrate) to obtain an ITO film-attached glass substrate (transparent conductive film attachment substrate) with a ...
Embodiment 2
[0097] An ITO film with a film thickness of 40 nm was formed on a glass substrate in the same manner as in Example 1 above to obtain an ITO film-attached glass substrate with a transparent ITO film.
Embodiment 3
[0099] An ITO film with a film thickness of 200 nm was formed on a glass substrate in the same manner as in Example 1 above to obtain an ITO film-attached glass substrate with a transparent ITO film.
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Abstract
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