Elimination of first wafer effect for pecvd films

Abstract

The present invention generally provides an apparatus and method for eliminating the 'first wafer effect' for plasma enhanced chemical vapor deposition (PECVD). One embodiment of the present invention provides a method for preparing a chamber after the chamber being idle for a period of time. The method comprises a cleaning step followed by a season step and a heating step adapted to the length of the idle time.

Description

technical field [0001] Embodiments of the invention generally relate to apparatus and methods for depositing thin films on semiconductor substrates using chemical vapor deposition (CVD). More specifically, embodiments of the present invention relate to apparatus and methods for eliminating the "first wafer effect" of plasma enhanced chemical vapor deposition (PECVD). Background technique [0002] Semiconductor manufacturing includes a series of processes for producing multilayer components on semiconductor substrates. For example, processing chambers may include semiconductor preprocessing chambers, clean chambers, bake chambers, chill chambers, chemical vapor deposition chambers, physical vapor deposition chambers, etch chambers, electrochemical plating chambers, and the like. Performing a successful operation requires flowing the substrates to be processed between these chambers, obtaining steady state performance on each substrate in the substrate flow. [0003] During ...

AI Technical Summary

Problems solved by technology

The panel usually has a radio frequency (RF) feedthrough to provide a bias potential to generate the plasma, the panel has a much lower temperature than the first substrate, resulting in a lower deposition rate

Additionally, the liquid flow meter (LFM) calibration factor can vary by as much as 5% after a long idle time, causing erratic precursor supply rates for the first few substrates

In addition, panels may be heated unevenly, resulting in uneven deposition across the substrate surface

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