Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor assembly and its forming method

A semiconductor and component technology, applied in the field of semiconductor components and their formation, can solve the problems of high dielectric constant layers that are difficult to form metal electrodes, occupy a large space, additional masks and steps for MIM decoupling capacitors, etc.

Active Publication Date: 2008-02-20
TAIWAN SEMICON MFG CO LTD
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010]In the traditional back-end process, additional masks and steps are required to form MIM decoupling capacitors
And the high-temperature program of the back-end process makes it difficult to form a high dielectric constant layer between the metal electrodes
In addition, MIM decoupling capacitors have a small capacitance and take up a lot of space, making it difficult to further reduce the size

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor assembly and its forming method
  • Semiconductor assembly and its forming method
  • Semiconductor assembly and its forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051]The capacitance of traditional MOS type capacitors will vary greatly with the applied voltage, and the proximity of the capacitor to the substrate will cause parasitic effects, while the formation of MIM type capacitors is integrated in the back-end process, requiring additional masks and steps, and the capacitance is small, occupying a large space, and it is difficult to further reduce the size. Therefore, the semiconductor industry urgently needs a good capacitor structure and its forming method.

[0052] 3A-3G show the method of forming the semiconductor device of the present invention. Referring to FIG. 3A , a substrate 20 is provided. The substrate can be a known semiconductor material such as silicon, germanium, silicon germanium, etc., and has an array region 30 and a decoupling region 40 . A shallow trench isolation region (hereinafter referred to as STI) 45 is formed in the array region 30 .

[0053] Referring to FIG. 3B , a plurality of active devices 50 are f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor module, comprising array area and substrate of decoupling area, a first dielectric layer mounted on the substrate, a second dielectric layer mounted on the first dielectric layer, a number of initiative areas fomed on the first dielectric layer of array area, a first capacitor formed on the second dielectric layer of array area, a second capacitor formed on the second dielectric layer of decoupling area and a first plug formed on the first dielectric layer of array area wherein the capacitor is electrically connected with the initiative element. In addition, the invention also provides a forming method of the said semiconductor module.

Description

technical field [0001] The present invention relates to semiconductors, and in particular to semiconductor components and methods of forming the same. Background technique [0002] The power supply line of the semiconductor integrated circuit chip can provide current to charge and discharge the active and passive components. For example, when the frequency signal is in the transition state, the digital CMOS circuit will consume current. But during the operation of the circuit, the power supply line supplies a relatively high-intensity momentary current, which causes voltage noise. When the fluctuation time of the instantaneous current is very short or its parasitic inductance and parasitic current are large, the voltage of the power supply line will fluctuate. In conventional circuits, the operating frequency of an integrated circuit is several million Hertz (MHz) to tens of million Hertz (GHz). In some circuits, the rise time of the frequency signal is very short, causing...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108H01L27/02H01L21/8242H01L21/82
CPCH01L28/55H01L28/91
Inventor 涂国基陈椿瑶
Owner TAIWAN SEMICON MFG CO LTD