Transient metal multiple adulterate negative temperature coefficient monocrystalline silicon thermistor
A technology of negative temperature coefficient and thermistor, which is applied to resistors with negative temperature coefficient, etc., can solve the problem of multiple doping of transition metal elements not involved, and achieve the effect of simple process
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Embodiment 1
[0030] a. Use a P-type monocrystalline silicon wafer with a resistivity of 1Ωcm, and use 20-mesh corundum to smooth both sides, put the silicon wafer into deionized water and use ultrasonic cleaning to remove the sand, and then use ammonia water, hydrogen peroxide, and deionized water according to the Boil the lotion prepared in a ratio of 1:1:5 for 20 minutes, and then wash with hot and cold deionized water alternately for 3 times;
[0031] b. Dissolve 0.5 gram of manganese acetate and 0.005 gram of copper chloride in 20 milliliters of ethanol to form a solution as a diffusion source. The concentration in the diffusion source is: the concentration of manganese ions is 1×10 -4 mol / ml, copper ion concentration is 1.5×10 -5 mol / ml;
[0032] c. Apply the diffusion source evenly on the surface of the silicon wafer treated in step a, and bake it under an infrared lamp until the surface is dry;
[0033] d. Put the silicon wafer coated with the diffusion source into a high-temperat...
Embodiment 2
[0039] a. Use a P-type single crystal silicon wafer with a resistivity of 2Ωcm, and use 20-mesh corundum to smooth both sides, put the silicon wafer into deionized water and use ultrasonic cleaning to remove the sand, and then use ammonia water, hydrogen peroxide, and deionized water according to the Boil the lotion prepared in a ratio of 1:1:5 for 20 minutes, and then wash it alternately with hot and cold deionized water for 4 times;
[0040] b. Dissolve 0.5 gram of manganese acetate and 0.008 gram of copper chloride in 20 milliliters of ethanol to form a solution as a diffusion source. The concentration of the diffusion source is: the concentration of manganese ions is 1×10 -4mol / ml, copper ion concentration is 1.5×10 -6 mol / ml;
[0041] c. Apply the diffusion source evenly on the surface of the silicon wafer treated in step a, and bake it under an infrared lamp until the surface is dry;
[0042] d. Put the silicon wafer coated with the diffusion source into a high-tempera...
Embodiment 3
[0048] a. Use a P-type monocrystalline silicon wafer with a resistivity of 3Ωcm, and use 20 emery to smooth both sides, put the silicon wafer into deionized water and use ultrasonic cleaning to remove the sand, and then use ammonia water, hydrogen peroxide, and deionized water according to 1 : Boil the lotion made in the ratio of 1:5 for 20 minutes, then wash it 5 times with hot and cold deionized water;
[0049] b. Dissolve 0.5 gram of manganese acetate and 0.05 gram of copper chloride in 20 milliliters of ethanol to form a solution with a certain concentration as a diffusion source. The concentration of the diffusion source is: the concentration of manganese ions is 1×10 -4 mol / ml, copper ion concentration is 1.5×10 -5 mol / ml;
[0050] c. Apply the diffusion source evenly on the surface of the silicon wafer treated in step a, and bake it under an infrared lamp until the surface is dry;
[0051] d. Put the silicon wafer coated with the diffusion source into a high-temperatu...
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