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Ozone post-deposition treatment to remove carbon in a flowable oxide film

A sediment and ozone technology, applied in the direction of gaseous chemical plating, coating, metal material coating process, etc., can solve the problems of easy collapse of the film, soft film, unstable deposited film, etc.

Active Publication Date: 2012-10-24
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Carbon in the deposited film causes the film to be soft and porous, which makes the deposited film unstable in subsequent processing steps such as etching
Because the deposited film is porous and due to the presence of carbon, the film tends to collapse
Additionally, carbon can cause device degradation if a flowable oxide material is used to fill the isolation trenches

Method used

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  • Ozone post-deposition treatment to remove carbon in a flowable oxide film
  • Ozone post-deposition treatment to remove carbon in a flowable oxide film
  • Ozone post-deposition treatment to remove carbon in a flowable oxide film

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Embodiment Construction

[0014] A method of removing residual carbon deposits from insulating materials is disclosed. The insulating material is used as a void filling material, for example, to fill a trench on a semiconductor substrate. An insulating material is deposited on the trench to form an insulating layer that contains residual carbon deposits. These residual carbon deposits are exposed to O 3 In and removed.

[0015] The semiconductor substrate may be a semiconductor flake or other substrate containing a semiconductor material layer. The term "semiconductor substrate" as used herein includes silicon flakes, silicon on insulator ("SOI") substrates, silicon on sapphire (SOS) substrates, epitaxial silicon layers on semiconductor substrates, and other semiconductor materials, such as Silicon-germanium, germanium, gallium arsenide, indium phosphide. Such as Figure 1A As shown, the semiconductor substrate 2 may include many active regions 4 and many non-active regions 6. Active devices, such as ...

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Abstract

A method of removing residual carbon deposits from an insulative material. The insulative material comprises silicon, carbon, and hydrogen and is a flowable oxide material or a spin-on, flowable oxide material. The residual carbon deposits are removed from the insulative material by exposing the material to ozone. The insulative material is used to form an insulative layer in a trench located on a semiconductor substrate.

Description

Technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more specifically, to a method of removing residual carbon deposits from a semi-finished semiconductor device structure. Background technique [0002] In the past few years, the performance of semiconductor devices has improved significantly due to the increase in circuit density on semiconductor substrates. As the density of semiconductor devices has increased, it has become necessary to reduce the size of circuit elements forming the semiconductor device so that the necessary number of circuit elements can fit the semiconductor substrate. [0003] Semiconductor devices usually include a semiconductor substrate and many adjacent active devices, which are electrically insulated from each other. As circuit density increases, effective insulation between active devices becomes more important. One type of insulation technology is local oxidation of silicon isolation ("LOCOS"...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3105H01L21/312C23C16/40C23C16/32C23C16/56H01L21/316
CPCH01L21/31633C23C16/56H01L21/3121H01L21/02337H01L21/02211H01L21/31058H01L21/02126H01L21/02271H01L21/02203H01L21/02282C23C16/401
Inventor G·S·桑德胡L·李
Owner MICRON TECH INC