Memory structure and operating method thereof

Abstract

A method for operating a memory, which is used to make the memory have a first threshold voltage or a second threshold voltage. The method includes: applying an operating voltage to the gate of the memory, and the operating voltage lasts for a first period of time, so that the memory has the first threshold voltage; and, applying the same operating voltage to the gate of the memory, the operating voltage lasts for a second period, so that the memory has a second threshold voltage. The length of the first time period is different from the length of the second time period.

Description

technical field [0001] The present invention relates to a memory structure and its operating method, and more particularly to a method of operating a memory with a single voltage and a memory structure using the same. Background technique [0002] The operation mode of the traditional memory is to apply an operating voltage to the gate of the memory, inject holes or electrons into the charge trapping layer of the memory to change the threshold voltage, and make the memory have a programming status. When reading with a read voltage, a bit state can be obtained, such as 0 or 1; when data is to be erased, another operating voltage is applied to the gate of the memory, and the holes or electrons are removed from the charge of the memory. The trapping layer excludes, or extracts complementary charge carriers from the underlying substrate to neutralize the trapped electrons or holes to restore the threshold voltage to an erased state, which can be obtained when reading using the r...

AI Technical Summary

Problems solved by technology

[0003] However, this kind of memory operation method must allow the memory to have the ability to apply two different operating voltages to the gate, which makes the operation method or design complexity of the memory relatively increased.

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