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Structure of memory card and the method of the same

A technology of memory card and hole structure, applied in the field of memory card structure

Inactive Publication Date: 2008-07-30
ADVANCED CHIP ENG TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Structure of memory card and the method of the same
  • Structure of memory card and the method of the same
  • Structure of memory card and the method of the same

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[0034] The present invention will be described in detail below in conjunction with its preferred embodiments and the accompanying drawings. It should be understood that the preferred embodiments of the present invention are only used for illustration rather than limiting the present invention. In addition, except for the preferred embodiments herein, the present invention can also be widely applied to other embodiments, and the present invention is not limited to any embodiment, but should be determined by the scope of the appended patent application.

[0035] The invention discloses a wafer level package (WLP) structure, the base of which has predetermined grooves, and through holes are formed in the base. The photosensitive layer is coated on the die and the preformed substrate. Preferably, the photosensitive layer is made of elastic material.

[0036] Fig. 2 is a pre-formed substrate, Fig. 3 and Fig. 4 are the structure of a memory card, and Fig. 5 is a process according ...

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Abstract

The invention provides a memory card structure, which includes a substrate with crystal grain receiving grooves on the upper surface, a through hole structure and wiring formed on the substrate. A first die is disposed in the die receiving groove. A first dielectric layer is formed on the first crystal grain and the substrate. A first re-distribution layer (re-distribution layer, RDL) is formed on the first dielectric layer, wherein the first re-distribution layer is coupled to the first die and the wiring. A second dielectric layer is formed on the first redistribution layer. A second crystal grain is disposed on the second dielectric layer. A third dielectric layer is formed on the second dielectric layer and the second crystal grain. A second redistribution layer is formed on the third dielectric layer, wherein the second redistribution layer is coupled to the second die and the first redistribution layer. A fourth dielectric layer is formed on the second redistribution layer. A third die is formed on the fourth dielectric layer and coupled to the second redistribution layer. A fifth dielectric layer is formed around the third die, and a plastic cover covers the first, second and third die.

Description

technical field [0001] The present invention relates to a structure of a memory card, and more particularly to a substrate having a chip receiving groove for disposing the chip. Background technique [0002] In the field of semiconductor devices, the density of devices continues to increase, and the volume gradually decreases. The demand for packaging or interconnection technology of high-density devices is also increasing to meet the above situation. Generally, in a flip-chip attachment method, an array of solder bumps is formed on the surface of a die. Solder bumps are formed by passing solder composition material through a solder mask to produce the desired pattern of solder bumps. The functions of die package include power distribution, signal distribution, heat dissipation, protection and support, etc. Due to the complexity of the semiconductor structure, conventional technologies such as lead frame package, flex package, and rigid package are unable to produce high-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06K19/077H01L25/00H01L25/18H01L23/48H01L21/50H01L21/60
CPCG11C5/02G11C5/025G11C5/063H01L23/49855H01L23/5389H01L25/0657H01L2224/32145H01L2224/48091H01L2225/06517H01L2225/06524H01L2225/06527H01L2924/01078H01L2924/01079H01L2924/09701H01L24/24H01L2924/01029H01L2224/16H01L2224/24227H01L2224/32225H01L2224/73267H01L2924/18161H01L2924/19105H01L2924/15153H01L2224/05569H01L2224/05008H01L2224/05026H01L2224/05548H01L2224/05001H01L2224/05124H01L2224/05144H01L2224/05147H01L2224/05155H01L2224/05166H01L2224/05624H01L2224/05644H01L2224/05647H01L2224/05655H01L2224/05666H01L24/20H01L2224/92244H01L2924/00014H01L2924/01028H01L2924/013
Inventor 杨文焜余俊辉林志伟周昭男
Owner ADVANCED CHIP ENG TECH INC