Optical proximity amending method

Abstract

The invention provides a optical contiguity correction method comprising providing layout main graph, forming diffuse transmission strip auxiliary pattern in gaps of adjacent layout main graph, correcting the difference value which the low limit of diffuse transmission strip auxiliary pattern detract the offset of exposure machine. The invention also provides a masking plate, its forming method and visualization method. The difference between the dimension of diffuse transmission strip auxiliary pattern and the design dimension has been reduced to zero by correcting the difference value whichthe low limit of diffuse transmission strip auxiliary pattern detract the offset of exposure machine, has prevented the shrinking or deletion of low limit of diffuse transmission strip auxiliary pattern to ensure large enough exposal art work windows and stabilize the exposal art.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an optical proximity correction method. Background technique [0002] Traditional processes for preparing semiconductor devices often use photolithography to form desired patterns on semiconductor substrates. In the photolithography process, the so-called resolution limit of the exposure equipment means that the exposure equipment can repeatedly expose the most subtle feature patterns on the semiconductor substrate. Currently, the resolution limit for state-of-the-art optical exposure equipment is about 0.05 microns, which is close to the critical dimension (CD) of many current IC layout designs. Therefore, the resolution of the exposure machine will have an impact on the final size and density of the IC circuit. [0003] The limit of the size resolution R representing the smallest graphic is reflected by the following formula (1): [0004] R=k 1 λ / NA (1) [0005] k ...

AI Technical Summary

Problems solved by technology

[0013] The problem solved by the present invention is that as the critical dimension becomes smaller and smaller, when the critical dimension of the scattering strip auxiliary pattern designed for increasing the exposure process window is less than 200nm (4×), it is not easy to transfer to the mask plate, resulting in The depth of focus of the exposure machine is reduced and the size of the auxiliary graphics of the scattering strip is reduced or even missing

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