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Preparing method of polycrystalline silicon thin film

A polysilicon film and a manufacturing method technology, which are applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve the problems of a large variation range of the resistance value of the polysilicon film, and the inability to fine-tune the resistance value of the polysilicon film. degree of effect

Active Publication Date: 2011-03-23
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The resistance value of the polysilicon film obtained by the existing polysilicon film preparation method has a large variation range, and the purpose of fine-tuning the resistance value of the polysilicon film cannot be achieved.

Method used

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  • Preparing method of polycrystalline silicon thin film
  • Preparing method of polycrystalline silicon thin film

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Embodiment Construction

[0017] The following uses an example to explain the present invention. If the standard value (Rs) of the resistance of the polysilicon film used as the semiconductor gate is 310 ohms, the polysilicon film is deposited on the semiconductor substrate using the existing polysilicon film preparation method, and then the semiconductor The source, drain and polysilicon film are implanted with ions, and the test is repeated until the appropriate dose is injected to make the parameters of the semiconductor device reach the standard value, but the resistance value of the semiconductor polysilicon film only reaches 305 ohms (ohm). The invention discloses a preparation method of a polysilicon film, which can achieve the effect of micro-adjusting the resistance value of the polysilicon film to a standard value without changing the pre-adjusted ion implantation dose.

[0018] The preparation method of the polysilicon film disclosed in the present invention includes the following steps:

[0019]...

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Abstract

The invention provides a method for making a multicrystal silicon membrane, relating to the semiconductor making field. The method comprises the following steps that: a deposition device for carrying out deposition reaction is provided and comprises a reaction chamber carrying out membrane deposition and a reaction gas flow control module; a semiconductor substrate is provided and is arranged inside the reaction chamber of the deposition device; a gas flow peak value is set in the reaction gas flow control module to carry out a first predeposition step; when reaction gas flow reaches to the preset peak value, a second predeposition step is carried out; a main deposition step is carried out; and ion implantation of preset dose for a deposited multicrystal silicon membrane is carried out. Compared with the prior art, the method adjusts the resistance value of a multicrystal silicon membrane through dividing a predeposition step into two steps and controlling the peak value of reaction gas flow by means of the first predeposition step, thereby increasing the precision of a semiconductor device.

Description

Technical field [0001] The present invention relates to manufacturing technology in the semiconductor field, and in particular to a method for preparing a polysilicon film as a semiconductor gate. Background technique [0002] The polysilicon film used as the semiconductor gate is usually prepared by gas deposition. The preparation method is generally to introduce silane gas (SiH4) into the reaction chamber of the deposition device through a vent pipe, and decompose and deposit the silane gas on the semiconductor deposition surface to form a polysilicon film at a temperature of 620 degrees. For the 0.18 micron or more high-precision technology generation, the semiconductor gate uses an undoped gate, and the polysilicon film needs to be implanted with phosphorus ions and boron ions to change its resistance characteristics. The resistance value (Rs) of the polysilicon film is changed by controlling the dose of ion implantation. [0003] In order to reduce the process steps of the p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205H01L21/265C30B25/16C30B31/22
Inventor 范建国季峰强董智刚黄柏喻
Owner SEMICON MFG INT (SHANGHAI) CORP