Radio frequency electrode and film preparing device

Abstract

The invention relates to a radio-frequency electrode used for film preparation. The radio-frequency electrode is provided with a flat plate structure (11), and a plurality of conductive lugs (13) are arranged on the bottom surface of the flat plate structure (11). The invention also relates to a film preparation device which comprises the radio-frequency electrode, wherein, the plurality of conductive lugs (13) of the radio-frequency electrode are extended into the centers of air distribution holes (4) distributed on an air distribution plate (3), and gaps are arranged between the conductive lugs (13) and the air distribution holes (4). The film preparation device arranges the conductive lugs which are inserted into the air distribution holes on the flat plate structure, thereby strong discharge can be generated on the circumference of the conductive lugs through air in the air distribution holes during the film preparation process, consequently reducing the bombardment damage of ionized ions on a film and improving the quality of the deposited film.

Description

RF electrode and thin film preparation device technical field The invention relates to thin film preparation technology, in particular to a radio frequency electrode for thin film preparation and a thin film preparation device. Background technique In the production process of amorphous silicon cells, thin films are usually prepared by plasma enhanced chemical vapor deposition (PlasmaEnhancedChemicalVaporDeposition, referred to as PECVD). In this PECVD process, the gas distribution method of flat electrode and microporous structure is mostly used, as shown in Figure 1, which is a schematic structural diagram of an existing thin film preparation device, including a flat RF cathode 1, a gas distribution plate 3, and a TCO substrate 5 and a heating plate 6, wherein a plurality of air distribution holes 4 are uniformly distributed on the gas distribution plate 3, and the reaction gas 2 introduced during film preparation will be ionized into ions under the action of an electric...

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Problems solved by technology

In this PECVD process, the gas distribution method of flat electrode and microporous structure is mostly used, as shown in Figure 1, which is a schematic structural diagram of an existing thin film preparation device, including a flat RF cathode 1, a gas distribution plate 3, and a TCO substrate 5 and a heating plate 6, wherein a plurality of air distribution holes 4 are evenly distributed on the gas distribution plate 3, and the reaction gas 2 introduced during film preparation will be ionized into ions under the action of an electric field and deposited on the TCO substrate 5, At the same time, the ions passing through the air distribution holes 2 also strongly bombard the thin film layer 7 on the TCO substrate 5 under the action of the electric field, thereby affecting the quality of the deposited thin film.

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