HIT solar cell structure and manufacturing method thereof

Abstract

The invention relates to an HIT (Heterojunction with Intrinsic Thin layer) solar cell structure and a manufacturing method. The manufacturing method comprises the following steps: firstly, thermal oxidization is performed for SiO2 layers taken as masks on the front and the back sides of an N-shaped silicon underlay; secondly, holes are formed on the SiO2 layer on the front side of the N-shaped silicon underlay, an intrinsic amorphous silicon layer and a P-shaped amorphous layer are deposited on the front side in sequence, an AL203 thin film is deposited, holes are formed on the AL203 thin film, a transparent conductive thin film is deposited as a window layer, and silk screening is performed for Ag grids via sizing agent; thirdly, on the back side of the solar cell, holes are formed on the SiO2 layer, another intrinsic amorphous silicon layer and an N-shaped silicon lay are deposited, and then another transparent conductive thin film is deposited; and lastly, silk screening is performed, so that a whole cell component is formed. Compared with an HIT cell manufactured by SANYO, the invention has the benefits that, the HIT solar cell structure provided by the invention simplifies a cleaning process, facilitates industrialization, can effectively lower surface recombination rate, and improves cell efficiency.

Description

Technical field [0001] The invention relates to a HIT solar cell structure and a manufacturing method thereof. Background technique [0002] Existing HIT solar cells have high requirements on the cleanliness of silicon wafers, and need to go through the steps of de-damage layer, cleaning and texturing, and chemical polishing. The cleaning process is complicated, and it is easy to form epitaxial silicon by directly growing a silicon film on the silicon wafer. In addition, when the transparent conductive film TCO is deposited by the magnetron sputtering method, certain damage will be caused to the surface of the a-si:H film, causing a large number of defects at the interface, forming a recombination center, and affecting battery efficiency. Summary of the invention [0003] The technical problem to be solved by the present invention is to provide a HIT solar cell structure and a manufacturing method thereof, and optimize the manufacturing process of the solar cell. [0004] The techn...

AI Technical Summary

Problems solved by technology

[0002] Existing HIT solar cells have very high requirements on the cleanliness of silicon wafers, and need to go through steps such as removing damaged layers, cleaning texturing, and chemical polishing. The cleaning process is complicated, and it is easy to form epitaxial silicon films directly on silicon wafers.

In addition, when the transparent conductive film TCO is deposited by the magnetron sputtering method, it will cause certain damage to the surface of the a-si:H film, resulting in a large number of defects at the interface, forming recombination centers, and affecting the efficiency of the battery.

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