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HEMT device and manufacturing method thereof

A technology of devices and dielectric layers, which is applied in the field of wide bandgap semiconductor GaN HEMT devices, can solve the problems of failure to achieve breakdown voltage, etc.

Active Publication Date: 2008-12-10
GPOWER SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When the situation is serious, several floating gates close to the drain can't even help to improve the breakdown voltage ( figure 1 )

Method used

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  • HEMT device and manufacturing method thereof
  • HEMT device and manufacturing method thereof
  • HEMT device and manufacturing method thereof

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Embodiment Construction

[0017] Various preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0018] figure 2 It is a gallium nitride enhanced field effect transistor structure of the present invention. The substrate 12 for growing gallium nitride material is generally Sapphire, SiC or silicon. The nucleation layer 13 is grown on the substrate 12; on the substrate 12 is a GaN buffer layer 14; on the buffer layer is an AlGaN isolation layer 15. The two ohmic contacts respectively form the source 22 and the drain 23 of the field effect transistor. In the region between the source 22 and the drain 23 , the surface of the device is completely covered by the SiN dielectric 32 . In the SiN dielectric close to the AlGaN surface, a double-layer gate structure is wrapped. The upper layer of the gate is conductive metal 24; the lower layer is SiO 2 Dielectric 33, and SiO 2 The dielectric exists only under the gate metal 24 . The s...

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Abstract

The invention provides an HEMT component and a method for manufacturing the HEMT component. The HEMT component is provided according to one side of the invention, which comprises: a semiconductor layer on a substrate; an isolated layer on the semiconductor layer; a source electrode and a drain electrode which contact with the semiconductor layer; and a grid and at least one floating gate on the isolated layer, wherein the grid and the floating gate have a double-layer structure, wherein the upper layer is a conducting layer and the lower layer is a first medium layer.

Description

technical field [0001] The invention relates to a GaN HEMT (High Electron Mobility Transistor) device with a wide bandgap semiconductor, in particular to a device structure design for increasing the breakdown voltage of the GaN HEMT by using multiple insulator floating gate structures. Background technique [0002] The dielectric breakdown voltage of the third-generation semiconductor gallium nitride (GaN) is much higher than that of the first-generation semiconductor silicon (Si) or the second-generation semiconductor gallium arsenide (GaAs), up to 3MV / cm, making its electronic devices able to withstand very high voltage. The channel of the GaN heterojunction structure has a high electron concentration and electron mobility, which means that the Gallium Nitride High Electron Mobility Transistor (HEMT) can conduct high current at high frequencies and has a very low conductance on-resistance. In addition, gallium nitride is a wide bandgap semiconductor that can work at high...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L29/49H01L29/423H01L21/335H01L21/28
CPCH01L29/404H01L29/0657H01L29/2003H01L29/407H01L29/4236H01L29/7786
Inventor 张乃千
Owner GPOWER SEMICON