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Method for recovering tail-gas generated during producing polycrystalline silicon using silicon tetrachloride

A technology of silicon tetrachloride and polysilicon, applied in the direction of silicon halide compounds, silicon, halosilane, etc., can solve the problems of insufficient utilization, large material consumption, serious environmental pollution, etc., and reduce the generation of pollutants and quantity, reducing the generation of pollutants, and the effect of solving environmental pollution problems

Active Publication Date: 2012-07-04
CHINA ENFI ENGINEERING CORPORATION
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Problems solved by technology

[0004] my country's polysilicon industry started in the 1950s, realized industrialization in the mid-1960s, and developed blindly in the early 1970s. There were more than 20 production plants, all using traditional Siemens technology, backward technology, serious environmental pollution, and material consumption. Large, high production costs, most enterprises lose money and stop production or change production one after another
[0005] The outstanding feature of the traditional polysilicon production process is the tail gas wet recovery technology, that is, the tail gas in the reduction furnace is initially pressurized to separate chlorosilane and then washed with water to recover hydrogen. Due to the process of water washing, impurity gases such as oxygen and carbon dioxide in the water will be released. Contamination of hydrogen, so a large amount of recovered hydrogen needs to be purified again. During the leaching process, chlorosilane is hydrolyzed to produce sewage, which needs further treatment, resulting in environmental pollution and large material consumption.
At the same time, the hydrogen generated in the production has not been fully utilized, which not only wastes energy, but also causes environmental pollution

Method used

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  • Method for recovering tail-gas generated during producing polycrystalline silicon using silicon tetrachloride
  • Method for recovering tail-gas generated during producing polycrystalline silicon using silicon tetrachloride
  • Method for recovering tail-gas generated during producing polycrystalline silicon using silicon tetrachloride

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Embodiment 1

[0025] refer to figure 1 , which shows a flow chart of the industrial production of polysilicon that can be applied to the method for recovering the tail gas produced by the production of polysilicon by using silicon tetrachloride according to an embodiment of the present invention. In the prior art, there are multiple methods that can be industrialized The production of polysilicon, application polysilicon production technique of the present invention is to utilize industrial silicon and hydrogen chloride (HCl) as main raw material, generates trichlorosilane (SiHCl) by controlling reaction conditions 3 )-based mixture of chlorosilane and hydrogen, and then trichlorosilane (SiHCl 3 ) after being purified, sent to the reduction furnace to make trichlorosilane (SiHCl 3 ) and auxiliary material hydrogen (H 2 ) reaction, reduction to generate polysilicon.

[0026] In the process of the above-mentioned industrial production of polysilicon, the tail gas produced mainly includes h...

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Abstract

A method for recovering tail gas produced in the process of polysilicon production by tetrachlorosilane comprises the following steps: the tail gas is leached by liquid tetrachlorosilane; the leached tail gas is pressurized and cooled; and hydrogen is separated from hydrogen chloride and dichlordihydrosilicate by an absorbent; the separated hydrogen is absorbed and filtrated by an absorbent, the hydrogen can be recovered; the hydrogen chloride and chlorosilane in the absorbent are heated, the gaseous hydrogen chloride and the gaseous chlorosilane are taken out by the hydrogen, and then the tail gas is recycled; the liquid tetrachlorosilane is heated and / or pressurized, therefore, the hydrogen chloride and the dichlordihydrosilicate are desorbed; and the hydrogen chloride and / or the dichlordihydrosilicate are recovered by gas-liquid separation. By adopting a dry method, the tail gas treated by the method can be reused in the polysilicon production, therefore, the method has the advantages of adequate utilization of raw materials, reducing pollutants, solving the problem of environmental pollution, improving product quality and lowering cost.

Description

technical field [0001] The invention relates to a method for recovering and treating tail gas produced by industrial production of polysilicon, more specifically, to a method for recovering tail gas produced by producing polysilicon by using silicon tetrachloride. Background technique [0002] Polycrystalline silicon is the raw material for preparing monocrystalline silicon, which is ultimately used in the production of integrated circuits and electronic devices. It is one of the basic raw materials with the largest consumption and the highest purity requirements in the information industry. It is also a product and industry that the country encourages the development of. [0003] The world's advanced polysilicon production technology has always been monopolized by companies from the United States, Japan, and Germany. Each company has its own technical secrets and technical characteristics. After continuous research and development, it has formed its own production process. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01D53/14C01B33/107C01B33/03
Inventor 沈祖祥严大洲汤传斌肖荣晖毋克力
Owner CHINA ENFI ENGINEERING CORPORATION
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