Method for recovering tail gas generated by polycrystalline silicon production

A technology of polysilicon and exhaust gas, applied in the direction of halosilane, metal silicide, silicon halide compound, etc., can solve the problems of insufficient utilization of hydrogen, environmental pollution, large material consumption, and increased cost, and reduce pollutants The production and quantity, the effect of saving project investment and reducing consumption

Active Publication Date: 2012-06-06
CHINA ENFI ENGINEERING CORPORATION
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  • Abstract
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Problems solved by technology

However, during the water washing process, impurity gases such as oxygen and carbon dioxide in the water will pollute the hydrogen, so a large amount of recovered hydrogen needs to be purified again
In addition, the hydrolysis of chlorosilane during the washing process produces sewage, which requires further treatment, resulting in environmental pollution and large material consumption.
At the same time, the generated hydrogen has not been fully utilized, which not only wastes energy, increases costs, but also causes environmental pollution.

Method used

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  • Method for recovering tail gas generated by polycrystalline silicon production
  • Method for recovering tail gas generated by polycrystalline silicon production
  • Method for recovering tail gas generated by polycrystalline silicon production

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Embodiment Construction

[0026] Specific embodiments are described below in order to explain the present invention by referring to the figures, and the described embodiments are exemplary and should not be construed as limitations of the present invention.

[0027] refer to figure 1 , which shows a flow chart of the industrial production of polysilicon that can be applied to the method for recovering the tail gas produced by the production of polysilicon according to an embodiment of the present invention. In the prior art, there are multiple methods that can be used to produce industrialized polysilicon. Apply the present invention The advanced polysilicon production process uses industrial silicon and hydrogen chloride (HCl) as the main raw materials, and generates trichlorosilane (SiHCl) by controlling the reaction conditions. 3 )-based mixture of chlorosilane and hydrogen, and then through the purification technology of trichlorosilane (SiHCl 3 ) after being purified, sent to the reduction furnac...

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Abstract

The invention provides a method used for recycling exhaust gases from the production of polysilicon. The exhaust gases mainly include hydrogen, hydrogen chloride, dichlordihydrosilicate and silicon tetrachloride. The method mainly includes the following steps: exhaust gases are compressed and cooled to separate hydrogen, hydrogen chloride and dichlordihydrosilicate from liquid trichlorosilane andsilicon tetrachloride with the liquid-gas separation method; gaseous hydrogen, hydrogen chloride dichlordihydrosilicate are mixed with liquid absorbent to separate hydrogen and hydrogen chloride fromdichlordihydrosilicate; hydrogen chloride and dichlordihydrosilicate are separated from liquid absorbent through heating and / or compression; hydrogen chloride and dichlordihydrosilicate are separatedthrough heating and / or compression; trichlorosilane and silicon tetrachloride are separated through heating and / or compression and are separated through heating and / or compression. The method of the invention is used for dry processing and recycling of exhaust gases, and can be used in production of polysilicon; raw materials can be fully utilized, pollutants are reduced, environmental pollution is avoided, and the cost is reduced.

Description

technical field [0001] The invention relates to a method for recovering and treating tail gas produced by industrial production of polysilicon, more specifically, to a method for dry recovery of tail gas produced by producing polysilicon. Background technique [0002] Polycrystalline silicon is the raw material for preparing monocrystalline silicon, which is ultimately used in the production of integrated circuits and electronic devices. It is one of the basic raw materials with the largest consumption and the highest purity requirements in the information industry. It is also a product and industry that the country encourages the development of. [0003] The world's advanced polysilicon production technology has always been monopolized by companies from the United States, Japan, and Germany. Each company has its own technical secrets and technical characteristics. After continuous research and development, it has formed its own production process. Set out, strictly control ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): F25J3/00B01D53/14C01B3/50C01B7/07C01B33/06C01B33/107
Inventor 沈祖祥严大洲汤传斌肖荣晖毋克力
Owner CHINA ENFI ENGINEERING CORPORATION
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