Nonvolatile memory and forming method for the same

Abstract

The invention provides a nonvolatile memory, which is positioned on a substrate and comprises a tunneling layer, a charge capture composite layer, a grid and a source electrode / drain electrode area, wherein, the tunneling layer is positioned on the substrate; the charge capture composite layer is positioned on the tunneling layer; the grid is positioned above the charge capture composite layer; and the source electrode / drain electrode area is positioned in the substrate on both sides of the tunneling layer. The nonvolatile memory provided with the charge capture composite layer has good programming and erasing performance and data retaining capability. In addition, the high thermal budget technology is not needed for the formation of the charge capture composite layer, thereby reducing the thermal budget during the technological process.

Description

technical field [0001] The present invention relates to a non-volatile memory component and its manufacturing method, and in particular to a non-volatile memory with a multi-layer charge trapping layer and its manufacturing method. Background technique [0002] Known electrically programmable and erasable non-volatile memory technologies based on charge storage structures, such as electrically erasable programmable read-only memory (EEPROM) and flash memory, are used in a variety of modern applications. [0003] As the size of integrated circuits shrinks, there is increasing interest in charge trapping layer based memory cell structures because of the scalability and ease of the fabrication process. Memory cell structures based on charge trapping layers include those known (for example) by the industry names Nitride ROM, Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) and Band Engineered Silicon-Oxide-Nitride -Oxide-silicon (BE-SONOS) and other structures. These memory cell st...

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Problems solved by technology

[0005] However, for silicon nitride as the material of the nitride layer in SONOS, if it is a silicon nitride film rich in nitrogen, it is mostly a deep-level charge storage center, and the ability of charge trapping is compared to shallow-level defects. come bad

However, if it is a silicon-rich silicon nitride film, most of them are charge storage centers with shallow energy levels. Although the charge capture ability is high, the charge loss ability is also high, resulting in a very low charge storage ability.

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