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Chemical mechanical polishing pad with controlled wetting

A chemical mechanical and polishing pad technology, applied in the field of polishing pads, can solve the problems of materials that have not developed planarization efficiency and zero defect formation

Active Publication Date: 2010-11-17
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Despite improvements in composites over monolayer structures, no material has yet been developed that simultaneously achieves ideal planarization efficiency and zero-defect formation

Method used

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  • Chemical mechanical polishing pad with controlled wetting
  • Chemical mechanical polishing pad with controlled wetting
  • Chemical mechanical polishing pad with controlled wetting

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Embodiment Construction

[0026] As used herein and in the appended claims, the term "projected area" refers to the total area occupied by polishing elements and subsections thereof in a horizontal plane parallel to the polishing surface of the chemical mechanical polishing pad. The projected area includes the area in the horizontal plane physically occupied by the polishing element (hereinafter "contact area") and the void space in the horizontal plane between the polishing element and any adjacent polishing elements.

[0027] As used herein and in the appended claims, the term "contact area" refers to the subset of the total projected area of ​​the polishing element in the horizontal plane that is physically occupied by the polishing element.

[0028] As used herein and in the appended claims, the term "non-contact area" refers to the total surface area of ​​a polishing element that is not in the horizontal plane, eg, the surface of the polishing element at an angle to the horizontal plane.

[0029] Th...

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Abstract

Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising a polishing texture that exhibits a dimensionless roughness, R is between 0.01 and 0.75. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates.

Description

technical field [0001] The present invention generally relates to polishing pads for chemical mechanical polishing. In particular, the present invention relates to a chemical mechanical polishing pad having a polishing structure for chemical mechanical polishing of magnetic, optical, and semiconductor substrates. Background technique [0002] In the manufacture of integrated circuits and other electronic devices, layers of conductive, semiconducting, and dielectric materials need to be deposited on and removed from the surface of semiconductor wafers. remove. Thin layers of conductive, semiconducting, and dielectric materials can be deposited using several deposition techniques. Common deposition techniques in modern wafer processing include physical vapor deposition (PVD) (also known as sputter coating), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), and electrochemical plating, among others . Common removal techniques include wet an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24D13/00B24B29/00H01L21/304B24D99/00
CPCB24B37/26B24B7/228H01L21/304
Inventor 江波G·P·马尔多尼R·V·帕拉帕思
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC