Organic el device and method of manufacturing the same
A technology of electroluminescent devices and electroluminescent elements, applied in the direction of electroluminescent light source, semiconductor/solid-state device manufacturing, electric solid-state devices, etc. problems such as increased thickness
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Embodiment approach 1
[0025] figure 1 is a cross-sectional view illustrating the structure of an organic electroluminescent (EL) device according to Embodiment 1 of the present invention. On a transparent glass substrate 1, an electroluminescence element 2 is formed. This electroluminescence element 2 comprises: on the glass substrate 1 surface, form the anode 3 as the first electrode layer, the organic light emission layer 4 that forms on the anode 3, and form on the organic light emission layer 4 as the second electrode layer cathode 5. A sealing film 6 is formed on the surface of the electroluminescent element 2 to cover the electroluminescent element 2 .
[0026] The glass substrate 1 can be made of a transparent or translucent material capable of transmitting visible light. Therefore, in addition to glass, a resin satisfying this condition can also be used as a substrate material. The anode 3 of the electroluminescent element 2 may function as an electrode, and may be at least transparent...
Embodiment approach 2
[0046] Figure 5 A cross-sectional view of an organic electroluminescence device according to Embodiment 2 of the present invention is illustrated. This organic electroluminescent device is in figure 1 A second sealing film 7 is formed on the surface of the sealing film 6 in Embodiment 1 shown.
[0047] Using polysilazane to form SiO with a thickness of 0.01-2.0μm 2 The film serves as the second sealing film 7 . Here, in this specification, polysilazane is considered to contain a dielectric, and in which hydrogen atoms partially bonded to silicon atoms are also substituted with alkyl groups or the like. The second sealing film 7 contains an alkyl group, in particular, a methyl group with a small molecular weight, thereby improving the adhesive performance of the sealing film 6 as a base and giving SiO 2 The film is flexible, and therefore, even when the thickness of the second sealing film 7 is increased, generation of cracks is suppressed. As for the alkyl group, an alk...
Embodiment 1
[0060]An anode made of ITO with a thickness of 190 nm was formed on a transparent glass substrate by a reactive sputtering method. Next, as the cleaning of the substrate before forming the light-emitting layer by vapor deposition, the substrate is cleaned with an alkaline solution, then with purified water, and after drying, the substrate is cleaned with an ultraviolet light / ozone cleaning light source .
[0061] Transfer the substrate on which the anode is formed into the vapor deposition system, and then utilize a graphite crucible at a deposition rate of 0.1 nm / s and at a vacuum degree of about 5.0 x 10 -5 Copper phthalocyanine was deposited to a thickness of 10 nm on the surface of this anode at Pa. to form hole injection regions.
[0062] Then, using a graphite crucible, at a deposition rate of 0.1 nm / s and at 5.0 x 10 -5 Under a vacuum degree of Pa, a tetramer of triphenylamine is deposited on the surface of the hole injection region with a thickness of 30 nanometers ...
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Abstract
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