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Light-emitting diode and method for fabricant thereof

A technology of light-emitting diodes and light-emitting layers, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the back surface area, reducing heat release characteristics, cost issues, etc., and achieves suppressed operating voltage, high reliability, and high brightness Effect

Inactive Publication Date: 2009-03-04
SHOWA DENKO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In a structure having a light-emitting surface in the upper part, when the inclination angle is increased in order to make the effect of the side shape remarkable, the increase results in a reduction in the rear surface area, a reduction in heat release characteristics, and a reduction in luminance characteristics in the high current level domain
When the light-emitting layer is made smaller and the rear surface area is made larger in order to improve the heat release characteristics, a cost problem occurs due to a large loss of the expensive light-emitting layer

Method used

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  • Light-emitting diode and method for fabricant thereof
  • Light-emitting diode and method for fabricant thereof
  • Light-emitting diode and method for fabricant thereof

Examples

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example 1

[0131] figure 1 and figure 2 The semiconductor light emitting diode 10 manufactured in Example 1 is schematically illustrated. figure 1 is a planar graph, and figure 2 is along figure 1 A cross-sectional view taken along line II-II. image 3 is a schematic cross-sectional view of the multilayer structure of the semiconductor epitaxial stacked structure used in the semiconductor light emitting diode 10 of Example 1, and Figure 4 is an example by bonding the substrate 14 to the image 3 A schematic cross-sectional view of a structure produced by a semiconductor epitaxial stacked structure.

[0132] The semiconductor light emitting diode 10 manufactured in Example 1 was a red light emitting diode (LED) having an AlGaInP light emitting portion 12 . It is made by bonding an epitaxial laminated structure formed on a semiconductor substrate 11 made of GaAs and a GaP substrate 14 .

[0133] The light-emitting diode 10 is manufactured by using an epitaxial wafer...

manufacture example 2

[0149] A semiconductor light emitting diode 10 of Example 2 was manufactured, which had the same structure as that of Example 1, but made a metal layer 24 of AuSn eutectic (melting point: 283° C.) formed on the back surface, as Figure 5 shown in .

[0150] The assembly with Figure 8 and Figure 9 A semiconductor light-emitting diode lamp (LED lamp) 1 of the structure schematically exemplified in FIG.

[0151] In the same manner as in Example 1, the semiconductor light emitting diode lamp 1 manufactured by using the semiconductor light emitting diode 10 of Example 2 was evaluated. The results are shown in Table 1 below. The forward voltage (Vf) during which a current of 500 mA flows in the forward direction is 2.4V. The intensity of light emission was able to reach a high brightness of 6430mcd, reflecting the fact that the heat release characteristics were further improved and the absorption of light by the Ag paste was eliminated.

example 3

[0161] A light emitting diode according to Example 3, which is another specific example of the second embodiment, will be described below by referring to the drawings.

[0162] Figure 10 and Figure 11 The semiconductor light emitting diode 10 of Example 3 is illustrated. Figure 10 is a planar graph, and Figure 11 is along Figure 10 A cross-sectional view taken along line XI-XI. Figure 12 is a schematic cross-sectional view of the multilayer structure of the semiconductor epitaxial stacked structure used in the light emitting diode 10 of Example 3, and Figure 13 is an example by bonding a GaP substrate 14 to Figure 12 A schematic cross-sectional view of a structure produced by a semiconductor epitaxial stacked structure.

[0163] The semiconductor light emitting diode 10 of Example 3 is a red light emitting diode (LED) having an AlGaInP light emitting portion 12, which is fabricated by bonding an epitaxial laminated structure provided on a semiconduc...

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Abstract

A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light -emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light -emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.

Description

[0001] Cross References to Related Applications [0002] This application is based upon an application filed under 35 U.S.C. §111(a) pursuant to 35 U.S.C. §119(e)(1), claiming Provisional Application No. 60 filed December 30, 2005 under 35 U.S.C. §111(b) 2005- 369334, Japanese Patent Application No. 2005-369620 filed on December 22, 2005, and Japanese Patent Application No. 2005-369996 filed on December 22, 2005. technical field [0003] The present invention relates to a transparent substrate light emitting diode having a light emitting layer made of compound semiconductor and provided with a light extraction surface on which a first electrode and a second electrode having a polarity different from the first electrode are formed . More particularly, the present invention relates to a light emitting diode excellent in heat release characteristics and exhibiting high luminance and a method of manufacturing the same. Background technique [0004] In order to impart high lum...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/30H01L33/40H01L33/56H01L33/62
CPCH01L2224/48091H01L24/45H01L2224/48465H01L2224/45144H01L2224/49107H01L2224/05554H01L2224/45H01L2224/73265H01L2924/01322H01L2924/12041H01L2924/181
Inventor 锅仓互竹内良一
Owner SHOWA DENKO KK
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