Solid state imaging device, its manufacturing method, and imaging device

A technology of solid-state imaging device and photosensitive part, which is applied in semiconductor/solid-state device manufacturing, radiation control device, image communication, etc., can solve problems such as difficulty in implementing insulating layers, and achieve the effect of noise reduction

Active Publication Date: 2013-06-26
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this reason, it is difficult to realize the insulating layer because a high-performance insulating layer with high charge retention performance is required.

Method used

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  • Solid state imaging device, its manufacturing method, and imaging device
  • Solid state imaging device, its manufacturing method, and imaging device
  • Solid state imaging device, its manufacturing method, and imaging device

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Embodiment Construction

[0076] The following will refer to the figure 1 A cross-sectional view of a solid-state imaging device (first solid-state imaging device) according to an embodiment (first example) of the present invention will be described.

[0077] Such as figure 1 As shown, the solid-state imaging device 1 includes a photosensitive portion 12 that performs photoelectric conversion of incident light L in a semiconductor substrate (or semiconductor layer) 11 . On the side portion of the photosensitive portion 12 , a peripheral circuit portion 14 formed with a peripheral circuit (not specifically shown) is provided with the pixel separation region 13 interposed therebetween. The following description will be made using the semiconductor substrate 11 . On the light-receiving face 12s of the photosensitive portion (including a hole collection layer 23 to be described later) 12, an interface state lowering layer 21 is formed. The interface state reduction layer 21 is made of, for example, si...

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PUM

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Abstract

A solid state imaging device and a manufacturing method thereof are provided to form a hole accumulation layer in an interface of a light receiving surface of a light receiving part by forming a film supplying a negative voltage on a top of an insulation film of the light receiving part. A solid state imaging device(1) includes a light receiving part(12) which converts an incident light of a semiconductor substrate(11). A peripheral circuit part including a peripheral circuit is formed in a side of the light receiving part. A film(21) lowers an interface state, is formed on a top of a light receiving surface(12s) of the light receiving part, and is made of SiO2 film. A film(22) having a negative charge is formed on a top of the film lowering the interface state. A hole accumulation layer(23) is formed on the light receiving surface of the light receiving part. The peripheral circuit includes a pixel circuit having a transmitting transistor, a reset transistor, an amplification transistor, and a selection transistor. The peripheral circuit includes a driving circuit, a vertical scanning circuit, a shift register / an address decoder, and a horizontal scanning circuit.

Description

[0001] Cross References to Related Applications [0002] The present invention contains subject matter of Japanese Patent Application No. 2007-265287 filed in the Japan Patent Office on October 11, 2007, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a solid-state imaging device capable of suppressing dark current generation, a manufacturing method thereof, and an imaging device. Background technique [0004] Solid-state imaging devices such as CCDs (Charge Coupled Devices) and CMOS image sensors are widely used in video cameras, digital cameras, and the like. In all types of solid-state imaging devices, sensitivity improvement and noise reduction are important issues. [0005] In particular, in a state where there is no incident light, even if there is no pure signal charge generated by photoelectric conversion of incident light, when charges (electrons) generated due to minute defects in the subst...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L21/822H04N5/225
CPCH01L27/14621H01L27/14627H01L27/14692
Inventor 押山到安藤崇志桧山晋山口哲司大岸裕子池田晴美
Owner SONY CORP
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