Implant optimization scheme

Abstract

The present invention provides a method for implanting ions in a substrate and a method for manufacturing an integrated circuit. The method for implanting ions in a substrate, among other steps, including placing a substrate ( 410 ) on an implant platen ( 405 ) such that a predominant axes ( 430 ) of the substrate ( 410 ) is rotated about 30 degrees to about 60 degrees or about 120 degrees to about 150 degrees offset from a radial with respect to the implant platen ( 405 ), and further wherein the substrate ( 410 ) is not tilted. The method further includes implanting ions into the substrate ( 410 ), the rotated position of the predominant axes ( 430 ) reducing shadowing.

Description

technical field [0001] [0001] The present invention relates generally to implantation optimization schemes, and more particularly to implantation optimization schemes in which the major axis of the substrate into which ions can be implanted is chord-wise to the implantation disk. Background technique [0002] [0002] Advanced integrated circuit design requires precise control of beam incidence angles. While there are many different types of beam incidence angle errors, three of the more common types are: cone angle errors, beam deflection errors, and parallelism errors across the entire wafer surface. Cone angle errors are typically the result of cone angle effects caused by the geometry of the wafer scanning system. Taper angle errors cause variations within the wafer. For example, the beam angle error can be approximately -x degrees on one side of the wafer, approximately zero degrees at the center of the wafer, and approximately +x degrees on the opposite side of the waf...

AI Technical Summary

Problems solved by technology

Although the distance (d) can be estimated using the equation d=htan(θ), it still produces an undoped / underdoped region 170 defined by the distance (d), which is often prone to severe degradation of the transistor device 140 operational problems

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