Film forming method, film forming device, and storage medium

Abstract

An object (a semiconductor wafer (W), for example) having a recess formed in its surface is placed on a placing bed (34) disposed in a treating container (24) made evacuative. A plasma is then generated inside of the treating container (24), in which a metal target (70) is ionized by the plasma to produce metal ions. A bias electric power is fed to the placing bed (34), so that the metal ions are attracted by the fed bias electric power to the object placed on the placing bed (34), thereby to form a thin film on the surface of the object including the face in the recess. The magnitude of the bias electric power is varied within a range, in which the surface of the object is not substantially sputtered.

Description

technical field [0001] The present invention relates to a film-forming method, a film-forming device and a storage medium, and in particular to a method for forming a barrier film and a seed film for filling a recess formed on a processed object such as a semiconductor wafer. Film method, film forming device and storage medium. Background technique [0002] Generally, when manufacturing a semiconductor device, various processes such as film formation and pattern etching are repeatedly performed on a semiconductor wafer to manufacture a desired device. Here, in order to achieve further high integration and high miniaturization of semiconductor devices, the line width and aperture of the semiconductor devices are increasingly miniaturized. In terms of wiring materials and embedding materials in semiconductor devices, the resistance needs to be made smaller due to the miniaturization of various dimensions. Therefore, copper, which has a very small resistance and is cheap, tend...

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Problems solved by technology

Therefore, there is the following problem: later, in the electroplating process, even if the metal film 12 composed of a copper film or the like is used to fill the concave portion 4, the plating solution cannot sufficiently enter the inside, so that the concave portion 4 The interior is not sufficiently filled, resulting in gaps (void)16

However, in this case, the following problem arises: even if a sufficiently thick seed film 10 can be formed at the bottom inside the recess 4 due to the high directivity of the metal ions, a side wall in the recess 4 is locally produced. The place where the seed film hardly accumulates, or the film thickness of the seed film 10 becomes very uneven

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