Double patterning strategy for contact hole and trench

Abstract

A method of lithography double patterning includes forming a first resist pattern on a substrate, the first resist pattern including at least one opening therein on the substrate; curing the first resist pattern; forming a second resist pattern on the substrate; forming a material layer on the substrate; and removing the first and second resist patterns to expose the substrate. Thereby, double resist pattern, that is the first resist pattern and the second resist pattern, is formed by using lithography double patterning, a separated spcacing between the first resist pattern and the second resist pattern results in a reduced minimum features size.

Description

technical field [0001] The invention relates to a lithographic pattern forming method, in particular to a lithographic double pattern forming method. Background technique [0002] Semiconductor technology continues to move toward smaller dimensions in modern times. In recent years, the size has evolved to 65 nanometers, 45 nanometers, and even smaller processes (that is, manufacturing processes, which are referred to as processes herein). The photoresist layer used to create the layout of tiny integrated circuits usually has a high aspect ratio. Under the above circumstances, how to maintain an ideal critical dimension (CD) will be more difficult due to many influencing factors. One of the challenging items is the critical dimension of the photoresist layer. For example, in the lithographic patterning process, the photoresist layer is easily affected by pattern collapse and CD reduction, which makes the process result unsatisfactory. [0003] It can be seen that the abov...

AI Technical Summary

Problems solved by technology

For example, in the lithographic patterning process, the photoresist layer is susceptible to pattern collapse and critical dimension reduction, which makes the process results unsatisfactory

[0003] It can be seen that the above-mentioned existing lithography pattern forming method obviously still has inconvenience and defects in method and use, and needs to be

Images