Super-resolution i-ray lithography device
A super-resolution and line-light technology, which is applied in the direction of photolithography exposure devices, microlithography exposure equipment, etc., can solve the problem that the evanescent wave photoresist cannot be used for photosensitization, so as to improve the internal working environment, avoid damage, reduce The effect of small subject size
Active Publication Date: 2011-03-16
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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Problems solved by technology
In existing i-line or g-line projection lithography devices, the mask is separated from the substrate, and the evanescent wave cannot be used to sensitize the photoresist. The resolution is generally above 500 nanometers, and it needs to be placed in an ultra-clean room to work.
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[0020] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments. But following embodiment only limits to explain the present invention, and protection scope of the present invention should include the whole content of claim, and promptly can realize the whole content of claim of the present invention to those skilled in the art through the following implementation example.
[0021] Such as figure 1 As shown, the super-resolution i-line lithography apparatus of this example includes the following systems: separate exposure system 1, self-purifying air filter system 2, air-controlled elastic mask deformation system 3, alignment system 4, substrate stage system 5 and vibration isolation system6.
[0022] The functions of each system are as follows:
[0023] Separate exposure system: provide 365nm I-line mercury lamp UV light source for near-field lithography process;
[0024] Self-purifying air filtration sy...
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Abstract
The invention relates to a super-resolution i-ray lithography device, which comprises a separation type exposure system, a self-purification air filtration system and a pneumatic-control elastic mask deformation system. The exposure system adopts an i-ray mercury lamp light source which is separated from a uniform light illumination system, and the light energy transmission between the two parts is achieved through optical fibers; in the pneumatic-control elastic mask deformation system, the air pressure is changed through a micro-air pump to lead an elastic mask to be deformed, and the mask is closely attached to a chip through controlling the amount of deformation of the elastic mask, thereby obtaining super-resolution lithography resolution; the self-purification air filtration system satisfies the requirement of ultraclean internal work environment through the recirculation filtration of an air cleaner arranged on the top of a housing of the super-resolution i-ray lithography device. By adopting the super-resolution i-ray lithography device containing the systems, the super-resolution near-field lithography function is served under the i-ray ultraviolet wavelength of the mercury lamp light source, breaking through 100 nanometers; and the lithography device has high the lithography resolution, simple structure, low cost, convenient operation, low demands to environment, andis suitable for various nano-structure manufacture field.
Description
technical field [0001] The invention belongs to the field of nanostructure processing, and relates to a super-resolution i-line photolithography device with a self-purifying air filter system. technical background [0002] A photolithography device is a high-precision device for microstructure replication. With the continuous development of the semiconductor electronics industry, the integration of processing graphics on the chip is also getting higher and higher. Due to the limitation of the diffraction limit in the traditional lithography device, in order to improve its lithography resolution, it is necessary to increase the numerical aperture of the lithography or use a lithography light source with a shorter wavelength. Both immersion lithography devices and extreme ultraviolet lithography devices can achieve lithography resolution requirements below 100 nanometers, but they both have extremely stringent technical requirements, so they are also expensive and difficult t...
Claims
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IPC IPC(8): G03F7/20
Inventor 罗先刚王长涛陈旭南甘大春刘尧赵泽宇方亮邢卉崔建华
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI