Method and apparatus for preventing/reducing substrate back polymer deposition

Abstract

The invention relates to a method for preventing / reducing polymer deposition on the back surface of a substrate during the etching process. The method comprises the steps that a substrate is fixedly arranged on a substrate bracket in a vacuum process chamber; reaction gas is injected to perform etching process; and part of the reaction gas is redirected or additional reaction gas is introduced into the part of the reaction gas as auxiliary gas and outward blown along the back surface of the substrate, so as to prevent / reduce the polymer deposition generated on the back surface of the substrate. By adopting the method, the polymer deposition on the back surface of the substrate can be effectively prevented / reduced. Because the blown auxiliary gas is also reaction gas or contains reaction gas, the concentration of the reaction gas at the edge part of the substrate can not be obviously influenced, the etching reaction effect in the edge zone of the substrate is ensured, the whole processis simple and convenient, the working performance is stable and reliable, and the application range is wider.

Description

technical field [0001] The invention relates to the technical field of micromachining of substrates, in particular to a method and a device for preventing / reducing polymer deposition on the back side of substrates during micromachining of substrates. Background technique [0002] Micromachining of substrates is a well-known technique that is widely used in the fabrication of devices such as semiconductors, flat panel displays, light emitting diodes (LEDs), solar cells, and the like. Micromachining of substrates is usually performed in vacuum processing chambers. The two most common processes utilizing vacuum processing chambers include chemical vapor deposition and etching of the substrate placed therein. [0003] For example, in the oxide etching process using a vacuum processing chamber, the substrate to be etched generally includes a bottom layer, an oxide layer to be etched, and a photosensitive resist formed on top of the oxide layer. The oxide layer can be SiO 2 , BP...

AI Technical Summary

Problems solved by technology

But this method increases the operation time for processing the substrate and reduces the productivity of the system

In addition, the oxygen-aggressive cleaning also shortens the lifetime of components in the processing chamber (such as substrate holder 2, surrounding ring 4, focus ring 1)

[0005] In the prior art, it is also disclosed that additional components are used to prevent / reduce the deposition of polymers. For example, Chinese patent (patent application No. 200710153279.7) discloses an adjustable RF connection ring for reducing the number of substrates and processing chambers. Polymer deposition in the gaps between the walls, which reduces polymer deposition on the edge of the substrate but not on the back of the substrate

[0006] In addition, U.S. Patent No. 6,281,144 discloses a method of preventing polymer deposition on the backside of a substrate by blowing an inert gas (such as argon, helium, or nitrogen) outward from the backside of the edge of the substrate during chemical vapor deposition. , but this method will dilute / dilute the reaction gas near the edge of the substrate during the reaction, which will affect the processing technology of the edge of the substrate, thereby affecting the quality of semiconductor devices in the edge region of the substrate

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