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Surface acoustic wave device and manufacturing method thereof

A technology of surface acoustic wave devices and piezoelectric substrates, which is applied in the direction of electric solid devices, semiconductor devices, semiconductor/solid device components, etc., and can solve problems such as the influence of frequency characteristics

Inactive Publication Date: 2012-04-18
TAIYO YUDEN KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] A problem with SAW devices using piezoelectric substrates is that the frequency characteristics are affected by the expansion and contraction of the piezoelectric substrate
However, these substrates have a large coefficient of linear expansion and greatly expand and contract due to temperature changes

Method used

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  • Surface acoustic wave device and manufacturing method thereof
  • Surface acoustic wave device and manufacturing method thereof
  • Surface acoustic wave device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0023] figure 1 is a cross-sectional view of the SAW device according to the first embodiment of the present invention taken along a line so as to exhibit cross-sections of comb electrodes and column electrodes.

[0024] refer to figure 1 A SAW device 10 has a piezoelectric substrate 12 having a main surface with comb electrodes 14 and reflective electrodes (not shown for simplicity) thereon. The piezoelectric substrate 12 can be made of lithium tantalate (LiTaO 3 ) or lithium niobate (LiNbO 3 )production. The comb electrodes 14 and the reflective electrodes may be aluminum (Al) or an Al alloy to which copper (Cu) is added. Interconnect electrodes 16 are provided on the main surface of the piezoelectric substrate 12 and are electrically connected to the comb electrodes 14 . The interconnection electrode 16 may be made of Al or an Al alloy to which copper is added.

[0025] The resin portion 20 is provided on the main surface of the piezoelectric substrate 12 to define th...

no. 2 approach

[0044] The second embodiment has an exemplary structure in which an insulating film 26 is formed on the main surface of a piezoelectric substrate 12 . Figure 5 is a cross-sectional view of the SAW device according to the second embodiment taken along a line so as to exhibit a cross-section of the comb electrodes 14 and the column electrodes.

[0045] refer to Figure 5 A SAW device 10 has a piezoelectric substrate 12 having a main surface on which comb electrodes 14 , reflective electrodes (not shown), and interconnection electrodes 16 are formed. The comb electrodes 14 are electrically connected to the interconnect electrodes 16 . The resin portion 20 is located on the surface of the piezoelectric substrate 12 so as to be able to define the cavity 18 above the comb electrodes 14 . The insulating film 26 is thicker than the piezoelectric substrate 12 , and the linear expansion coefficient of the insulating film 26 is smaller than that of the piezoelectric substrate 12 in th...

no. 3 approach

[0052] The third embodiment has an exemplary structure having an insulating film 26 on both the front surface and the rear surface of the piezoelectric substrate 12 . Figure 8 is a cross-sectional view of the SAW device according to the third embodiment taken along a line so as to exhibit cross-sections of the comb electrodes 14 and the column electrodes 22 .

[0053] refer to Figure 8 A SAW device 10 has a piezoelectric substrate 12 on which comb electrodes 14 , reflective electrodes (not shown), and interconnect electrodes 16 are formed. The comb electrodes 14 are electrically connected to the interconnect electrodes 16 . The resin portion 20 is formed on the main surface of the piezoelectric substrate 12 so that the cavity 18 can be defined above the comb electrodes 14 . An insulating film 26 is formed on the main surface of the piezoelectric substrate 12 to cover the resin portion 20 . The column electrodes 22 are provided on the interconnect electrodes 16 so as to pe...

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PUM

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Abstract

The invention relates to a surface acoustic wave device and a manufacturing method thereof. A surface acoustic wave device comprises: a piezoelectric substrate; a comb electrode arranged on a first surface of the piezoelectric substrate; and an insulating film arranged on at least one of the first surface of the piezoelectric substrate and a second surface of the piezoelectric substrate opposite to the first surface; the insulating film has the thickness larger than that of the piezoelectric substrate and, in a propagation direction of the surface acoustic wave, has the coefficient of linear expansion smaller than that of the piezoelectric substrate.

Description

technical field [0001] The present invention relates generally to surface acoustic wave devices, and more particularly, to improvements in the temperature characteristics of surface acoustic wave devices. Furthermore, the present invention relates to a method of manufacturing the above-mentioned surface acoustic wave device. Background technique [0002] This application is based on and claims priority from Japanese Patent Application No. 2008-028269 filed on February 8, 2008, the entire contents of which are hereby incorporated by reference. [0003] A surface acoustic wave device (SAW device) is capable of exciting an acoustic wave by applying power to comb electrodes of an interdigital transducer (IDT) formed on a piezoelectric substrate. SAW devices are widely used in various circuits that process radio signals in a frequency band of, for example, 45 MHz to 2 GHz. Examples of these circuits are bandpass filters for transmit, bandpass filters for receive, local oscillat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/145H03H3/08H10N30/00H10N30/80H01L23/02H01L23/08H03H9/25
CPCH03H9/1092H03H9/02574H03H9/059H01L2224/11H01L2924/16235Y10T29/42
Inventor 森谷亮川内治
Owner TAIYO YUDEN KK