Double trigger silicon controlled rectifier
A silicon rectifier, trigger current technology, applied in the direction of thyristor, etc., can solve the problems of inability to withstand high voltage levels, low voltage device components cannot withstand high voltage levels, etc.
Inactive Publication Date: 2009-09-02
RAYDIUM SEMICON
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Problems solved by technology
However, if the e-fuse adjustment circuit 100 is used in a low-voltage process, it will encounter the problem of not being able to withstand a high voltage level, because the e-fuse adjustment circuit 100 usually requires a voltage of a high voltage level to provide a large enough voltage. The adjustment current, but the low-voltage device components cannot withstand the high voltage level
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[0015] Certain terms are used in this specification and the scope of subsequent claims to refer to specific components, but those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The scope of claims does not use the difference in name as the way to distinguish elements, but the difference in function of elements as the criterion for distinguishing. The "comprising" mentioned in the entire specification and subsequent claims It is an open term, so it should be interpreted as "including but not limited to". In addition, the term "coupled" includes any direct and indirect electrical connection means. Therefore, if the first device is described in the text Two devices means that the first device can be directly electrically connected to the second device, or indirectly electrically connected to the second device through other devices or connection means.
[0016] The present invention relates to a dual-trigger...
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The invention provides a double trigger silicon controlled rectifier which comprises a semiconductor substrate, a N well, a P well, a first N+ diffusion zone, a first P+ diffusion zone, a second N+ diffusion zone, a second P+ diffusion zone, a third P+ diffusion zone which is arranged on one side of the double trigger silicon controlled rectifier across the N well and the P well, a third N+ diffusion zone which is arranged on the other side of the double trigger silicon controlled rectifier across the N well and the P well, a first grid which is arranged above the surface of the N well between the second P+ diffusion zone and the third P+ diffusion zone, and used as a P-type trigger point for receiving a first triggered current or a first triggered voltage, and a second grid which is arranged above the surface of the P well between the first N+ diffusion zone and the third N+ diffusion zone, and used as a N-type trigger point for receiving a second triggered current or a second triggered voltage. The double trigger silicon controlled rectifier can bear high voltage level, and switch more quickly to conduct circuit or not.
Description
technical field [0001] The present invention relates to a dual triggered silicon controlled rectifier (dual triggered silicon controlled rectifier, DTSCR), in particular to a dual triggered silicon controlled rectifier which can be applied in a trim-fuse circuit. Background technique [0002] refer to figure 1 , figure 1 Shown is a conventional electrical fuse adjustment circuit 100 using large-sized metal-oxide-semiconductor (MOS) transistors as switching elements, such as figure 1 As shown, the electrical fuse adjustment circuit 100 includes a MOS transistor switch element 110 and an electrical fuse 120 , wherein the MOS transistor switch element 110 is used to receive a control signal Sc to control whether to allow the adjustment current to pass through the MOS transistor switch element 110 . However, if the e-fuse adjustment circuit 100 is used in a low-voltage process, it will encounter the problem of not being able to withstand high voltage levels, because the e-fuse...
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IPC IPC(8): H01L29/74
Inventor 洪根刚
Owner RAYDIUM SEMICON