Unlock instant, AI-driven research and patent intelligence for your innovation.

Immersion lithography technique and product using a protection layer covering the resist

A photoresist layer, photolithography technology, applied in the field of photolithography

Inactive Publication Date: 2009-10-14
FREESCALE SEMICON INC
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These existing proposals do not address the use of immersion lithography, and thus water-soluble topcoats are often proposed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Immersion lithography technique and product using a protection layer covering the resist
  • Immersion lithography technique and product using a protection layer covering the resist
  • Immersion lithography technique and product using a protection layer covering the resist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] will now refer to figure 1 and 2 describe a preferred embodiment of the immersion lithography method according to the invention.

[0028] Such as figure 1 As shown in the flowchart of the method, step 1 in the method is to form a photoresist layer 20 on the substrate 10 . (It should be noted that substrate 10 may be a blank wafer or it may have been photolithographically patterned to produce specific features.) The resulting structure is schematically shown in Figure 2A .

[0029] Photoresist layer 20 may be formed on substrate 10 in any convenient manner. Typically, if the substrate is a wafer, the wafer will first be cleaned and subbed, a barrier layer formed on it, a photoresist formed thereon by spin coating using well known techniques, and then the photoresist soft fired solvent to remove unwanted traces of solvent. Typically, at the periphery of the photoresist layer, a few millimeters of this layer are removed ("edge bead removal"). Details of these proces...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
refractive indexaaaaaaaaaa
Login to View More

Abstract

In an immersion lithography method, the photoresist layer (20) is provided with a shield layer (30) to protect it from degradation caused by contact with the immersion liquid. The shield layer (30) is transparent at the exposure wavelength and is substantially impervious to (and, preferably, insoluble in) the immersion liquid. The shield layer (30) can be formed of a material which can be removed using the same developer as is used to develop the photoresist layer (20) after exposure.

Description

technical field [0001] The present invention relates to the field of lithography, and more particularly, to immersion lithography. Background technique [0002] Photolithography (or photolithography) has been used in the semiconductor industry for more than 40 years as a pillar technology in the manufacture of integrated semiconductor elements and the like. Continuous improvements in lithography have enabled very small parts to be printed and fabricated. Unfortunately, this technology is starting to run into physical barriers that tend to limit further reductions in the size of manufacturable parts. Alternative techniques have been proposed, such as extreme ultraviolet lithography. However, these alternative technologies are not ready for application. [0003] The Rayleigh equation defines the minimum line width LW that can be printed by photolithography as follows: [0004] LM = kλ NA [0005] where k i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/09G03F7/11G03F7/20
CPCG03F7/70341G03F7/2041G03F7/11G03F7/09G03F7/20
Inventor 凯尔·帕特松柯克·施特罗泽夫斯基
Owner FREESCALE SEMICON INC