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Method of reading data in a non-volatile memory device

A non-volatile storage and data technology, applied in the direction of read-only memory, information storage, static memory, etc., can solve the problems of reduced read margin, different state and expected state, etc.

Active Publication Date: 2012-11-21
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] However, due to changes in temperature, the memory cell may be read at a different threshold voltage than expected
As a result, the read margin is reduced or the state of the memory cell differs from the expected state according to the read operation and the verify operation

Method used

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Embodiment Construction

[0026] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0027] figure 1 It is a graph showing changes in the read margin according to the temperature of a general nonvolatile memory device.

[0028] Because memory cells of a nonvolatile memory device have different characteristics, the memory cells do not have the same threshold voltage distribution. This can be caused by various reasons such as temperature changes.

[0029] When a specific memory cell is programmed at a high temperature and then read at a low temperature, the threshold voltage obtained through the read operation is higher than that of the programmed memory cell. Therefore, the difference between the threshold voltage of the memory cell having the highest threshold voltage and the second read voltage R2, ie, an over margin, becomes narrower. As a result, the difference between the threshold voltage distribution of memory ...

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Abstract

A method of reading data in a non-volatile memory device compensates for a change in a reading / verifying result in accordance with a change of temperature. The method includes sensing a temperature of memory cells, setting a first voltage and a second voltage of a bit line sensing signal in accordance with the sensed temperature, adding the difference of the first voltage and the second voltage at the high temperature, and reducing the difference of the first voltage and the second voltage at the low temperature, precharging a bit line in accordance with the set first voltage, evaluating a change of a voltage level of the bit line based on whether a memory cell for a read operation is programmed, and sensing data of the memory cell in accordance with the set second voltage. The method may read / verify data constantly even though a temperature is changed.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2008-0048622 filed on May 26, 2008, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a method of reading data in a non-volatile storage device. Background technique [0004] Recently, there has been an increased demand for nonvolatile memory devices that program and erase data electrically and do not require a refresh function of periodically rewriting data. [0005] A nonvolatile memory device performs a program operation and an erase operation by changing a threshold voltage of a memory cell through movement of electrons caused by a strong electric field applied to a thin oxide film. [0006] A nonvolatile memory device generally includes a memory cell array in which memory cells for storing data are arranged in a matrix shape, and a page for programming data in a specifi...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/28
CPCG11C16/3418G11C16/26G11C16/3436G11C16/30
Inventor 朴镇寿
Owner SK HYNIX INC