Unlock instant, AI-driven research and patent intelligence for your innovation.

Focus ring and plasma processing apparatus

A technology of plasma and focus rings, which is applied in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc., can solve problems such as weak shielding and achieve excellent shielding effects

Active Publication Date: 2012-07-04
TOKYO ELECTRON LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the relative permittivity of the alumina fired body is relatively high, 9 to 10, and the shielding property against high-frequency electric fields is weak.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Focus ring and plasma processing apparatus
  • Focus ring and plasma processing apparatus
  • Focus ring and plasma processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0034] figure 1 It is a cross-sectional view schematically showing an example of the plasma processing apparatus according to the first embodiment of the present invention.

[0035] figure 1 The illustrated plasma processing apparatus 1 is an example of an apparatus for performing predetermined processing on a glass substrate G for FPD, and is configured as a capacitively coupled parallel plate plasma etching apparatus. Here, examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display (PDP), and the like.

[0036] The plasma processing apparatus 1 has a processing chamber (processing chamber) 2 formed in the shape of an angular cylinder, and the processing chamber 2 is made of, for example, aluminum whose surface is subjected to an anti-corrosion oxidation treatment (alumite anodic oxidation treatment). A mounting table 3 for mounting a glass substrate G serving as a substrate to be processed is provided at the bottom of ...

no. 2 approach

[0054] image 3 A is a perspective view of an example of a focus ring according to the second embodiment, image 3 B is along image 3 Sectional view of line 3B-3B in A.

[0055] Such as image 3 A and image 3 As shown in B, in the focus ring 6 according to the second embodiment, the low-permittivity dielectric body 6a and the plasma-resistant dielectric body 6b are split-type formed by connecting a plurality of split members 6a1-6a4, 6b1-6b4, respectively. . The split-type focus ring 6 is effective when the glass substrate for the FPD is enlarged and it is difficult to form the focus ring 6 integrally.

[0056] In addition, in this example, in the split type focus ring 6 , the position of the junction 9 of the split members 6 a 1 to 6 a 4 is different from the position of the junction 10 of the split members 6 b 1 to 6 b 4 . There is a gap (gap) at the joint. It is necessary to apply high-frequency power to the base material 5 when plasma processing is performed. The...

no. 3 approach

[0063] Figure 6 is a cross-sectional view showing an example of the focus ring according to the third embodiment, Figure 7 It is a sectional view showing another example of the focus ring according to the third embodiment.

[0064] The low-permittivity dielectric body 6 a of the focus ring 6 only needs to be arranged on the substrate 5 side. So, for example, if Figure 6 As shown, the low-permittivity dielectric body 6a may also straddle (pervade, spread) the entire upper surface of the inner ring 7a from the upper surface of the flange portion 5b. In addition, it may also be as Figure 7 As shown, it is arranged only on the upper surface of the flange portion 5b.

[0065] But when Figure 7 In the case of the focus ring 6 shown, the position of the boundary surface 41 between the inner ring 7a and the low-k dielectric body 6a coincides with the edge (edge) 42 of the flange portion 5b. A gap exists in the boundary surface 41 . Furthermore, edge 42 is a corner. The ele...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a focus ring and a plasma processing apparatus, having excellent plasma resistance and shielding property relative to a high-frequency electric field. The focus ring is a multi-layer structure focus ring mounted on the edge of an electrode in a processing chamber for plasma treatment and stacked by a plurality of dielectric bodies with different dielectric coefficients, the dielectric body (6a) with low dielectric coefficient is arranged on one side of the electrode (5), and the dielectric body (6b) which dielectric coefficient is higher than that of the dielectric body (6a) and plasma resistance is higher than that of the dielectric body (6a) is arranged on the side of a processing space of the processing chamber.

Description

technical field [0001] The present invention relates to a focus ring mounted on a peripheral portion of an electrode and a plasma processing apparatus including an electrode mounted with the focus ring. Background technique [0002] A plasma processing apparatus is used to perform processing such as etching on a target object such as a substrate for flat plasma (hereinafter referred to as a glass substrate for FPD). [0003] As for the plasma device, for example, as described in Patent Document 1, there is a processing chamber for performing plasma processing on an object to be processed, and in this processing chamber, upper electrodes facing each other and an electrode that also serves as a place for placing the object to be processed are arranged. The lower electrode of the mounting table. High-frequency power is applied between the upper electrode and the lower electrode to generate plasma in the processing space between the upper electrode and the lower electrode. A f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/21H05H1/46H01J37/32
CPCH01J37/32642H01L21/67069
Inventor 南雅人佐佐木芳彦
Owner TOKYO ELECTRON LTD