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Method for preparing silicon-on-insulator material using selective corrosion process

A silicon-on-insulator, selective etching technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as limited application, uneven local resistivity distribution, and poor uniformity of silicon thickness on the top layer of SOI substrates

Active Publication Date: 2009-12-30
SHANGHAI SIMGUI TECH +1
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  • Abstract
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  • Claims
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Problems solved by technology

In this method, the corrosion selectivity of HNA solution to materials with different resistivity is utilized. However, the doping concentration required for HNA solution to achieve a good corrosion selectivity ratio has obvious differences, which limits the use of this technology in the preparation of low resistivity materials. Application of top layer silicon (resistivity less than 10Ω·cm) SOI substrate
And the epitaxial ligh

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  • Method for preparing silicon-on-insulator material using selective corrosion process
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  • Method for preparing silicon-on-insulator material using selective corrosion process

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Embodiment Construction

[0017] The specific implementation of the method for preparing the silicon-on-insulator material by using the selective etching process provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0018] attached figure 1 Shown is a schematic diagram of the implementation steps of this specific embodiment, including: step S10, providing a doped single crystal silicon substrate; step S11, growing an undoped intrinsic single crystal silicon layer on the surface of the single crystal silicon substrate; step S12, growing a device layer on the surface of the intrinsic single crystal silicon layer; step S13, providing a supporting substrate; step S14, growing an insulating layer on the surface of the supporting substrate; step S15, using the exposed surface of the insulating layer and the device layer as a bonding surface , to perform bonding; Step S16, using a selective etching process to remove the doped single crystal silico...

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Abstract

A method for preparing a silicon-on-insulator material using selective corrosion process comprises the following steps: providing a doped monocrystalline silicon substrate; growing an undoped intrinsic monocrystalline silicon layer on the surface of the monocrystalline silicon substrate; growing a component layer on the surface of the monocrystalline silicon substrate; providing a support substrate; growing an insulating layer; bonding the monocrystalline silicon substrate with the support substrate; selecting the selective corrosion process to remove the doped monocrystalline silicon substrate; removing the intrinsic monocrystalline silicon layer. The invention is characterized by adopting the intrinsic monocrystalline silicon layer as the etch-stop layer and removing the intrinsic monocrystalline silicon layer in post process by methods of overheating oxidation and the like, thus the technical proposal provided by the invention can be used for preparing the silicon-on-insulator substrate with top silicon of arbitrary resistivity.

Description

【Technical field】 [0001] The invention relates to the field of semiconductor devices, in particular to a method for preparing a silicon-on-insulator material by using a selective etching process. 【Background technique】 [0002] Compared with bulk silicon devices, silicon-on-insulator (SOI) devices have the advantages of high speed, low driving voltage, high temperature resistance, low power consumption, and radiation resistance. rapid development. According to the thickness of the top silicon thin layer, SOI materials can be divided into two categories: thin film SOI (the thickness of the top silicon is less than 1 micron) and thick film SOI (the thickness of the top silicon is greater than 1 micron). [0003] At present, the preparation technologies of SOI materials mainly include oxygen injection isolation technology (SIMOX), bonding and backside etching technology (BESOI) and its derived smart stripping technology (Smart-cut), epitaxial layer transfer technology (ELTRAN)...

Claims

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Application Information

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IPC IPC(8): H01L21/762H01L21/20H01L21/324
Inventor 魏星王湘李显元张苗王曦林成鲁
Owner SHANGHAI SIMGUI TECH