Power conversion unit
A power conversion device, semiconductor technology, applied in the direction of output power conversion device, irreversible DC power input into AC power output, electrical components, etc., can solve the differences in gate drive circuits, current distribution switch element characteristics differences, The main circuit wiring inductance difference and other problems, to achieve the effect of reducing types
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Embodiment 1
[0081] figure 1 A perspective structural view showing Embodiment 1 of the power conversion device of the present invention, figure 2 express figure 1 The top view of the power conversion device, image 3 express figure 1 Side view of the power conversion device. This embodiment is a mounting structure in which two semiconductor modules 11 and 12 having substantially the same shape are connected in parallel, and its basic structure is the same as that described in Patent Document 5.
[0082] This embodiment can be applied to Figure 4 A common 3-phase inverter circuit is shown. Here, as an example of a semiconductor switching element, a semiconductor switching element using an insulated gate bipolar transistor IGBT will be described. Figure 4 A structure in which the load 7 is driven through a three-phase inverter circuit from a DC power supply or a smoothing capacitor not shown is shown. AC power of an arbitrary frequency and voltage is supplied to the load 7 by repea...
Embodiment 2
[0103] Refer to the following Figure 7 and Figure 8 Example 2 of the present invention will be described. Figure 7 is the three-dimensional structural diagram of the present embodiment, Figure 8 is the right side view of this embodiment.
[0104] This embodiment differs from Embodiment 1 in that the smoothing capacitor 50 is directly connected to the terminals 42 and 43 of the positive conductor and the terminals 411 and 412 of the negative terminal, and the snubber circuits 51 and 52 are omitted. Specifically, by arranging the semiconductor module and the smoothing capacitor adjacent to each other, the floating inductance of the wiring can be reduced, whereby a snubber circuit for suppressing a jump voltage during switching operation can be omitted.
[0105] In addition, in this embodiment, since the buffer circuit 52 is not provided, the gate resistor circuit board 2 can be provided near the upper surface of the semiconductor module 12 . Thus, the distance from the g...
Embodiment 3
[0117] Refer to the following Figure 14 to Figure 18 Embodiment 3 of the present invention will be described. Figure 14 The circuit configuration of the gate resistor circuit board 2 is shown. The difference between this embodiment and other embodiments is that the Image 6 The other structures of the Zener diodes (for example, 2511 and 2512 ) in the gate resistor circuit substrate 2 are the same as those of the above-mentioned embodiment, so the description of other structures is omitted. In the present embodiment, Zener diodes are provided on the side of the gate drive circuit substrate 29 before the branching of the gate resistor circuits provided corresponding to the respective semiconductor switches. This point is the same as the case of Patent Document 2.
[0118] Figure 15 as well as Figure 16 The mounting structure and wiring pattern of the gate resistor circuit board 2 are shown. exist Figure 15 and Figure 16 In the drawing, the resistors 241-244 and 261...
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